mram storage unit

A storage unit and memory unit technology, applied in information storage, static memory, digital storage information, etc., can solve the problems of error-prone reading, small reading window, slow reading speed, etc., so that it is not easy to read errors, The effect of reducing the read error rate

Active Publication Date: 2022-06-24
CETHIK GRP +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Existing magnetic memories based on spin-orbit moments can only store low-resistance states or high-resistance states. Due to the distribution of low-resistance states and high-resistance states of devices in the memory array, the read window is small or the distribution curves overlap. Error-prone and slow to read

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Embodiment Construction

[0042] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0043] An embodiment of the present invention provides an MRAM memory cell, comprising: two magnetic tunnel junctions and a spin-orbit moment supplying wire, the two magnetic tunnel junctions are respectively located on the same side surface of the spin-orbiting moment supplying wire, and each magnetic tunnel The fr...

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Abstract

The present invention provides an MRAM storage unit, comprising: two magnetic tunnel junctions and a spin-orbit moment supply line, the two magnetic tunnel junctions are respectively located on the same side surface of the spin-orbit moment supply line, and each The free layer of the magnetic tunnel junction is close to the spin-orbit moment supply line, the magnetization directions of the reference layers of the two magnetic tunnel junctions are the same, and the spin-orbit moment supply line is used for the two magnetic tunnel junctions The junctions impose spin moments in opposite directions, so that the free layers of the two said magnetic tunnel junctions have opposite magnetization directions. The MRAM storage unit of the present invention can store complementary resistance states, form a differential signal during state reading, reduce the reading error rate, and significantly increase the data reading speed.

Description

technical field [0001] The present invention relates to the technical field of magnetic memory, and in particular, to an MRAM storage unit. Background technique [0002] The core part of the storage unit of traditional magnetic memory (Magnetic Random Access Memory, MRAM) is the magnetic tunnel junction MTJ. MTJ is a two-port structure device composed of multi-layer films. The ferromagnetic layers are separated by a tunneling barrier layer, where the magnetization direction of one ferromagnetic layer is fixed and is called the fixed or reference layer, and the magnetization direction of the other ferromagnetic layer can be changed, called For the free layer, the magnetization direction of the free layer can be parallel to the magnetization direction of the reference layer (Parallel, P for short) or anti-parallel to the magnetization direction of the reference layer (Anti-Parallel, AP for short). When the magnetization directions of the two ferromagnetic layers are parallel,...

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G11C11/16H01L27/22H01L43/08
CPCG11C11/1673H10B61/20H10N50/10
Inventor何世坤熊保玉竹敏韩谷昌
OwnerCETHIK GRP