Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Implementation method and device for improving SSD writing performance, computer equipment and storage medium

An implementation method and technology for writing performance, which are applied in the field of implementing methods for improving SSD writing performance, computer equipment, storage media, and devices, and can solve the problems of the 31st user data and Parity data writing and writing performance reduction, etc.

Active Publication Date: 2020-11-06
SHENZHEN YILIAN INFORMATION SYST CO LTD
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the RAID data protection function is added, the last Parity data needs to wait for the first 31 sets of user data to complete the XOR operation to generate Parity data and then write it into Nand Flash. -Plane way to write, resulting in significantly reduced write performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Implementation method and device for improving SSD writing performance, computer equipment and storage medium
  • Implementation method and device for improving SSD writing performance, computer equipment and storage medium
  • Implementation method and device for improving SSD writing performance, computer equipment and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

[0051] In traditional technology, in order to improve the write performance of SSD, data needs to be written to NandFlash through Multi-Plane. Multi-Plane splicing requires that the write command must be prepared at the same time, and the data should be written to the same CE of different channels. After the RAID data protection function is added, the last Parity data needs to wait for the first 31 sets of user data to complete the XOR operation to generate Parity data and then write it into Nand Flash, so that the 31st user data and Parity data cannot be stored in Multi- Pl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an implementation method and device for improving SSD writing performance, computer equipment and a storage medium. The method comprises the steps of obtaining a data writingcommand issued by a host; judging whether the data writing command needs to write Party data or not; if the data writing command needs to write the Party data, enabling the current data writing command not to execute the writing operation firstly, and generating the corresponding Party data only through exclusive OR; judging whether the Party data is generated or not; and after the Party data is generated, enabling the Party data and a next command to form a Multi-Plane command, and writing the Multi-Plane command into a Nand Flash. According to the invention, the Multi-Plane splicing rate isincreased, so that the proportion of Cache Program is increased, and the writing performance of the SSD can be improved by 30%.

Description

technical field [0001] The invention relates to the technical field of solid-state hard disks, in particular to a method, device, computer equipment and storage medium for improving write performance of SSDs. Background technique [0002] NAND Flash flash chip is the main part of SSD (Solid State Disk) to store data. Because NandFlash has characteristics such as volatility and durability, it is easy to cause data loss. Therefore, SSDs need to consider increasing data protection capabilities and improving data reliability from a system perspective. Disk array (Redundant Arrays of Independent Disks, RAID) means "an array of independent disks with redundant capabilities". At present, mainstream SSDs support data protection capabilities through RAID. A disk array is composed of many independent disks, which are combined into a large-capacity disk group, and the performance of the entire disk system is improved by using the bonus effect generated by the data provided by individ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0659G06F3/0688Y02D10/00
Inventor 冷志源王伟良郭芳芳冯元元
Owner SHENZHEN YILIAN INFORMATION SYST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com