Patterned epitaxial substrate and semiconductor structure
A crystal substrate and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as process yield reduction, epitaxial substrate edge warping, lattice mismatch, etc., to improve yield and avoid edge warping Curve, good photoelectric characteristics and the effect of reliability
Inactive Publication Date: 2020-11-24
PLAYNITRIDE DISPLAY CO LTD
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Problems solved by technology
The substrate is uneven in stress due to thermal temperature difference or thermal expansion coefficient during the heating process and lattice mismatch, which causes the edge of the epitaxial substrate to warp, resulting in a decrease in the yield of subsequent processes
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[0072] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.
[0073] Figure 1A is a schematic top view of a patterned epitaxial substrate according to an embodiment of the present invention, Figure 1B yes Figure 1A A schematic cross-sectional view of the patterned epitaxial substrate along the line A-A'. Please refer to Figure 1A , the patterned epitaxial substrate 100a of this embodiment includes a substrate 110a and a plurality of three-dimensional patterns 120a. The substrate 110a has a center point C, and the substrate 110a has a first region 112a and a second region 114a surrounding the first region 112a. In particular, the first region 112a and the second region 114a of the substrate 110a are concentrically configured. More specifically, ...
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Abstract
The invention provides a patterned epitaxial substrate and a semiconductor structure. The patterned epitaxial substrate comprises a base material and a plurality of three-dimensional patterns. The base material has a first region and a second region surrounding the first region. The first region and the second region are arranged in a concentric manner. The three-dimensional patterns and the basematerial are integrally formed and arranged on the base material. The three-dimensional patterns comprise a plurality of first three-dimensional patterns and a plurality of second three-dimensional patterns. The first three-dimensional patterns are arranged in the first region. The second three-dimensional patterns are arranged in the second region. The size specification of the first three-dimensional patterns is different from the size specification of the second three-dimensional patterns. Through the design of the patterned epitaxial substrate, the edge warping phenomenon caused by the heating process can be avoided, and the yield of the subsequent process can be improved.
Description
technical field [0001] The present invention relates to a substrate structure and a semiconductor structure, in particular to a patterned epitaxial substrate and a semiconductor structure using the patterned epitaxial substrate. Background technique [0002] With the advancement of optoelectronic technology, the volume of many optoelectronic components is gradually miniaturized. In the process of making micro light-emitting diodes, it is necessary to grow another different material (such as epitaxial structure) on one material (such as epitaxial substrate). At this time, the thermal expansion coefficient and crystal lattice of the two materials must be considered. The degree of matching between atoms. The substrate is uneven in stress due to thermal temperature difference or thermal expansion coefficient during the heating process and lattice mismatch, causing warpage at the edge of the epitaxial substrate, resulting in a decrease in the yield of subsequent processes. Con...
Claims
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IPC IPC(8): H01L33/20
CPCH01L33/20
Inventor 许广元严千智赖彦霖
Owner PLAYNITRIDE DISPLAY CO LTD