Semiconductor device processing method and semiconductor device
A processing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, semiconductor/solid-state device manufacturing, etc., can solve the problems of increasing the thickness of semiconductor devices, unfavorable product thinning, and dielectric layer thickness.
Pending Publication Date: 2021-03-30
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
[0005] The processing method of the semiconductor device and the semiconductor device provided in the present application, the processing method of the semiconductor device can solve the problem that the existing method needs to deposit a thick dielectric layer, which will not only greatly increase the thickness of the semiconductor device, but is not conducive to the development of products in the direction of thinning and thinning. And need more times of mechanical grinding
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[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0025] The terms "first", "second", and "third" in this application are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, features defined as "first", "second", and "third" may explicitly or implicitly include at least one of these features. In the description of the present application, "plurality" means at least ...
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The invention provides a semiconductor device processing method and a semiconductor device. The semiconductor device processing method comprises the following steps of providing a semiconductor prefabricated part, wherein the semiconductor prefabricated part comprises a substrate, a first dielectric layer arranged on one surface of the substrate and at least one metal leading-out end embedded in the first dielectric layer, a groove is formed in the surface, away from the substrate, of the first dielectric layer, and the metal leading-out end is exposed out of the groove; a connecting pad is formed in the groove, the connecting pad is communicated with the metal leading-out end, and the upper surface of the connecting pad is lower than the surface, away from the substrate, of the first dielectric layer; performing a needle insertion test on the semiconductor prefabricated part, wherein a protruding part is formed on the surface of the connecting pad after the semiconductor prefabricatedpart is subjected to the needle insertion test; and forming a second dielectric layer on the surface, far away from the substrate, of the first dielectric layer, wherein the second dielectric layer covers the convex parts. The method can greatly reduce the thickness of the obtained product, and facilitates the development of the product in the thinning direction.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a semiconductor device processing method and the semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, 3D-IC (three-dimensional integrated circuit) technology has been widely used, which has made great contributions to the realization of high-performance interconnection and integration of the overall circuit. [0003] At present, the processing method of semiconductor devices is generally to form a connection pad on the surface of the semiconductor preform after the semiconductor preform is formed, and make the connection pad communicate with the metal layer in the semiconductor preform, and then use a probe to apply a certain force to contact with the semiconductor preform. The connection pads on the surface of the semiconductor preform are contacted and tested. However, obvious bumps or needle ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/48H01L21/50H01L21/52H01L23/31H01L23/48
CPCH01L21/4814H01L21/50H01L21/52H01L23/3121H01L23/481
Inventor叶国梁陈俊宇
OwnerWUHAN XINXIN SEMICON MFG CO LTD