Random magnetic tunnel junction device with controllable flip probability and application method
A magnetic tunnel junction and tunnel junction technology, applied in the application field of random magnetic tunnel junction devices, can solve the problems of low durability and poor consistency of device switching probability, and achieve the effect of quantitative adjustment and controllable switching probability.
Active Publication Date: 2022-03-01
BEIJING CHIP IDENTIFICATION TECH CO LTD +3
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[0004] The purpose of the embodiments of the present invention is to provide a random magnetic tunnel junction device with controllable turnover probability, so as to at least solve the problems of low durability and poor consistency of device turnover probability in existing magnetic tunnel junctions used in quantum computing systems
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[0026] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0027] With the increasing enhancement of integrated electrode technology and adapting to the increasing computing needs, the scale and complexity of integrated circuits are getting higher and higher. However, with the continuous development of artificial intelligence, big data, and the Internet of Things, problems that need to be solved The problem is also getting more complex. Due to the limitation of the processing capacity of the integrated circuit itself, the development of the integrated circuit is becoming more and more out of touch. Especially in the fields of sampling, reasoning, optimization, and reversible computing, because traditional Turing electr...
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Embodiments of the present invention provide a random magnetic tunnel junction device with controllable flip probability and an application method thereof, which belong to the field of semiconductor devices. The device includes: a basic magnetic tunnel junction sandwich structure, including a reference layer, a tunnel barrier layer and a free layer from top to bottom; a top electrode located above the reference layer, and the top electrode has a top electrode port; The control layer below the free layer is used to provide a bias magnetic field for the free layer. The control layer includes an exchange bias field layer and a bottom electrode arranged in an overlapping manner; An electrode port and a bottom second electrode port; the top electrode port, the bottom first electrode port and the bottom second electrode port are used singly or in any combination to regulate the random tunnel junction device flip probability. The solution of the invention realizes the controllable flipping probability of the random magnetic tunnel junction device.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a random magnetic tunnel junction device with controllable flipping probability and an application method of the random magnetic tunnel junction device with controllable flipping probability. Background technique [0002] With the increasing enhancement of integrated electrode technology and adapting to the increasing computing needs, the scale and complexity of integrated circuits are getting higher and higher. However, with the continuous development of artificial intelligence, big data, and the Internet of Things, problems that need to be solved The problem is also getting more complex. Due to the limitation of the processing capacity of the integrated circuit itself, the development of the integrated circuit is becoming more and more out of touch. Especially in the fields of sampling, reasoning, optimization, and reversible computing, because traditional Turing electroni...
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IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1697
Inventor赵东艳陈燕宁王于波付振邵瑾殷加亮潘成王文赫赵文龙肖睿卓昱东曹凯华赵巍胜
OwnerBEIJING CHIP IDENTIFICATION TECH CO LTD