LDMOS device and forming method thereof

A device and extension direction technology, applied in the field of LDMOS devices and their formation, can solve problems such as poor performance of LDMOS devices, and achieve the effects of avoiding drain current drop, improving stability, and improving reliable performance.

Pending Publication Date: 2022-02-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, existing LDMOS devices perform poorly

Method used

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  • LDMOS device and forming method thereof
  • LDMOS device and forming method thereof
  • LDMOS device and forming method thereof

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Experimental program
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Embodiment Construction

[0016] It can be seen from the background art that the currently formed semiconductor structure has the problem of poor performance.

[0017] After analysis, in the traditional radio frequency LDMOS structure in FINFET technology, both the well region and the drift region are composed of fin structures. Due to the three-dimensional characteristics of the fin structure in the drift region, the silicon / oxide interface region (3D structure) is much higher than the planar RF LDMOS structure, due to the larger silicon / oxide interface, under high pressure stress, the probability of hot carriers generated by impact ionization and trapped in the defects of the interface state Increase, resulting in a decrease in drain current, this LDMOS structure often has HCI failure problems, resulting in a decrease in the reliability of LDMOS devices.

[0018] In order to improve the reliability of LDMOS devices, the doping concentration of the drift region can be reduced to reduce the electric fi...

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Abstract

The invention discloses an LDMOS device and a forming method thereof. The forming method comprises the steps that: a substrate is provided, wherein a well region and a drift region which are adjacent are formed in the substrate, the well region comprises a first substrate and a first fin part protruding out of the first substrate, the drift region comprises a second substrate, and the top surface of the second substrate is flush with the top surface of the first fin part; and an oxide layer is formed on the first substrate exposed out of the first fin part, wherein the oxide layer is lower than the first fin part. According to the forming method of the LDMOS device provided by the embodiment of the invention, the reliability of the LDMOS device is improved, and meanwhile, the RF performance of the device is not influenced.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to an LDMOS device and a method for forming the same. Background technique [0002] With the rapid development of power integrated circuits, the research and development of power semiconductor devices is becoming more and more important. LDMOS is a kind of lateral high voltage device of DMOS device. It has the advantages of high withstand voltage, large gain, low distortion, etc., and is more compatible with CMOS technology, so it has been widely used in radio frequency integrated circuits. [0003] However, the performance of existing LDMOS devices is poor. [0004] In view of this, how to improve the performance of LDMOS devices has become an urgent technical problem to be solved by those skilled in the art. Contents of the invention [0005] The problem to be solved by the embodiments of the present invention is to provide an LDMOS device ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/10
CPCH01L29/66681H01L29/0607H01L29/0684H01L29/1079
Inventor张进书
OwnerSEMICON MFG INT (SHANGHAI) CORP