Testing component including work line of memory and capacitor overlaped and offset as well as its testing method

Abstract

The invention relates to testing component and method, especially a testing component in slotting track for testing an offset of overlapped DRAM word line structure with deep groove capacitor. The said capacitor possesses an embedding plate, a rectangle word line covering part of deep groove capacitor, first and second across word lines, first and second doping areas, first and second as well as third plugs. The first plug is coupled to first doping area; second plug is coupled to second doping area; the third plug is coupled to the embedding plate.

Description

technical field

[0001] The present invention relates to a test element (test key) and a method, in particular to a test element for detecting the overlapping offset of a word line structure of a dynamic random access memory and a deep trench capacitor (deep trench capacitor), and a test element for detecting the trench capacitor and active Area (active area) misalignment (misalignment) test components. Background technique

[0002] The trench capacitor is a common capacitor structure in dynamic random access memory (DRAM), which is formed in the semiconductor silicon substrate, and its depth can be increased by increasing the depth of the trench capacitor in the semiconductor silicon substrate. surface area to increase its capacitance.

[0003] figure 1 is a layout diagram of a conventional trench capacitor. The trench capacitor 10 is disposed under the passing wordline. The transistor 14 is electrically coupled to the storage node 16 of the trench capacitor 10 via the d...

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