Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate

A technology of component substrate and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as increased manufacturing cost, and achieve the effects of high processing accuracy, simple structure, and excellent alkali resistance.

Inactive Publication Date: 2007-05-09
MITSUBISHI ELECTRIC CORP
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] On the other hand, in order to form a high-melting-point metal film such as chromium (Cr) described in Patent Document 1, it is necessary to add a new film-forming process and a patterning (Patterning) process, and the manufacturing cost (costs) will also increase.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate
  • Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate
  • Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] The structure of the TFT array substrate according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a transparent plan view showing the structure of main parts of a TFT array substrate according to Embodiment 1 of the present invention. 2 is a cross-sectional view of the structure of the main part of the TFT array substrate according to Embodiment 1 of the present invention, showing the cross-section at the cutting line A-A of FIG. 1 .

[0074] As shown in FIGS. 1 and 2 , the TFT array substrate 100 is formed on a transmissive substrate 10 formed in a rectangular shape such as light transmissive glass, polycarbonate, or acrylic resin. Pixel electrodes 20 and TFT elements 30 serving as switching elements are formed in a matrix for each pixel. The inner surface of the TFT array substrate 100 on which the TFT elements 30 and the pixel electrodes 20 are arranged in a matrix for each pixel is arranged to face the inner sur...

Embodiment 2

[0147] The structure of the TFT array substrate according to Embodiment 2 of the present invention will be described with reference to the drawings. 6 is a transparent plan view showing the structure of main parts of a TFT array substrate according to Example 2 of the present invention. 7 is a cross-sectional view of the structure of main parts of a TFT array substrate according to Embodiment 2 of the present invention, showing a cross-section taken along line D-D in FIG. 6 .

[0148] In Embodiment 1 of the present invention, the TFT array substrate 100 used in a transmissive TFT liquid crystal display device is described. In Embodiment 2 of the present invention, the TFT array substrate 101 used in a transflective TFT liquid crystal display device is described.

[0149] In the TFT array substrate 100 of Embodiment 1 of the present invention, as shown in FIGS. The substrate 101 is different from this, as shown in FIG. 6 and FIG. 7 , both the reflective region and the transmis...

Embodiment 3

[0162] The structure of the TFT array substrate according to Embodiment 3 of the present invention will be described with reference to the accompanying drawings.

[0163] Fig. 9 is a transparent plan view showing the structure of main parts of a TFT array substrate according to Example 3 of the present invention. 10 is a cross-sectional view of the main structure of a TFT array substrate according to Embodiment 3 of the present invention, showing a cross-section along line E-E in FIG. 9 .

[0164] In Embodiment 3 of the present invention, as in Embodiment 2 of the present invention, the TFT array substrate 102 used in the transflective TFT liquid crystal display device will be described.

[0165] Different from the TFT array substrate 101 in Embodiment 2 of the present invention, as shown in FIG. 6 and FIG. 7 , an insulating film 38 is deposited on the drain electrode 340 in the reflective region of the pixel to form an insulating film 38 . In the TFT array substrate 102 , as...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The present invention provides a TFT array substrate 100 which includes a substrate 10, a pixel electrode 20 formed for each pixel on the substrate 10, and a TFT element 30 formed on the substrate 10 corresponding to the pixel electrode 20. Then, electrodes / wiring 31, 32, 34 and 331 connected to the TFT element 30 or a capacitance electrode 40 or the like are provided with laminated bodies formed by laminating upper layer films 31b, 32b, 34b and 331b and lower layer films 31a, 32a, 34a and 331a; the lower layer film 31a or the like is formed of aluminum alloy containing one or more types of eighth group elements of the periodic system; and the upper layer 31b or the like is laminated on the lower layer film 31a or the like, and formed of aluminum alloy containing one or more types of eighth group elements of the periodic system. Thus, a conductor structure whose constitution is simple, whose alkali-proof property is excellent, and whose working precision is high is obtained.

Description

technical field [0001] The present invention relates to a conductor structure, a method for manufacturing the conductor structure, an element substrate and a method for manufacturing the element substrate, for example, a conductor structure such as an electrode or wiring connected to a thin film transistor (TFT: ThinFilm Transistor) element formed on the substrate, the A method for manufacturing a conductor structure, an element substrate having the conductor structure, and a method for manufacturing the element substrate. Background technique [0002] In recent years, display devices such as liquid crystal display devices have been incorporated in many electronic devices such as mobile phones, portable information terminals, electronic organizers, and portable televisions. [0003] There are various types of liquid crystal display devices, and their operation modes include TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, etc., and their driving methods include p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L23/532H01L23/48H01L29/43H01L27/12H01L21/768H01L21/28H01L21/84G02F1/1343G02F1/136
CPCH01L27/1214G02F2001/136295H01L29/4908H01L27/124G02F2001/13629H01L29/458G02F1/13629G02F1/136295
Inventor石贺展昭长山显祐宫本贤一中堀正树井上和式
OwnerMITSUBISHI ELECTRIC CORP