Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

a technology of heat treatment apparatus and substrate, which is applied in the direction of electrical equipment, semiconductor/solid-state device manufacturing, basic electric elements, etc., can solve the problems of difficult manufacturing of lsi having a desired pattern, poor flatness of the substrate, and slip dislocation of the substrate, so as to prevent adhesion between the substrate and the supporting portion, high heat resistance, and low hardness

Inactive Publication Date: 2009-07-23
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution effectively prevents slip dislocation during high-temperature heat treatment, ensuring the flatness and quality of semiconductor wafers, thereby improving the manufacturing process by reducing substrate deformation and misalignment.

Problems solved by technology

In this case, there has been a problem that when the heat treatment is performed at a temperature of about 1000° C. or more, slip dislocation occurs in the substrate near the supporting groove, which may grow into a slip line.
When the slip line occurs, flatness of the substrate becomes worse.
Therefore, there has been a problem that misalignment of mask (misalignment of mask due to defocusing or deformation) occurs in a lithography process that is one of important processes in a LSI manufacturing process, and thus manufacture of LSI having a desired pattern is difficult.
That is, when the thickness of the coating is less than 30 μm, impurities are diffused from the boat material to a surface of the coating, therefore the object of the CVD coating, or prevention of impurity diffusion by the coating, can not be achieved, and when the thickness of the coating is more than 100 μm, a padding condition that CVD is concentratively deposited onto an edge portion of the boat material occurs, and if the boat (substrate support) is used in this condition, burrs are formed, causing particle contamination.
However, according to results of experiments by the inventor, although the above conventional examples where the substrate is placed on the dummy wafer become better compared with the example using the three-point-support, they are insufficient in a point of preventing the slip dislocation because of occurrence of the slip line.

Method used

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  • Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate
  • Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate
  • Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

Examples

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first example

[0092]FIG. 11 shows a first example according to the invention. In the substrate support 30 having the body portion comprising, for example, silicon carbide as the above embodiment, the placing portions 66 are formed protrusively from and parallel to the pole 64. Multiple poles, for example, three to four poles are provided as the pole 64. A plate (base) 88 comprises a cylindrical platelike-member made of, for example, silicon carbide (SiC), and a bottom periphery of the plate 88 is supported by the placing portion 66. The supporting portion 82 comprises a cylindrical platelike member made of silicon (Si), and placed on a top of the plate 88. The anti-adhesion layer 70 comprising, for example, silicon carbide is formed on the top of the supporting portion 82. The anti-adhesion layer 70 is preferably 0.1 μm to 50 μm thick. The substrate 68 is supported by the supporting portion 82 via the anti-adhesion layer 70.

[0093]While thickness of the plate 88 and thickness of the supporting por...

second example

[0095]FIG. 12 shows a second example according to the invention. In the substrate support 30 having the body portion comprising, for example, the silicon carbide similarly as the above embodiment, placing portions 66 are formed protrusively from and parallel to the pole 64. The multiple poles, for example, three to four poles are provided as the pole 64. The plate (base) 88 comprises the cylindrical platelike-member made of, for example, silicon carbide (SiC), and the bottom periphery of the plate 88 is supported by the placing portion 66. The supporting portion 58 made of silicon (Si) comprising the cylindrical platelike-member is placed on the plate 88. The anti-adhesion layer 70 comprising, for example, silicon carbide is formed on a top of the supporting portion 58.

[0096]The silicon carbide plate 88 having a thickness of 2.5 mm to 3 mm and a diameter Φ of 308 mm was supported by the substrate support 30 having the body portion made of silicon carbide, and the silicon supporting-...

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Abstract

A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

Description

[0001]This is a Continuation of application Ser. No. 10 / 528,069 filed Jul. 10, 2006, which in turn is a National Stage of PCT / JP03 / 012353 filed Sep. 26, 2003, which claims the benefit of Japanese Patent Application Nos. 2003-051244 filed Feb. 23, 2003 and 2002-282231 filed Sep. 27, 2002. The entire disclosure of the prior applications is hereby incorporated by reference herein in its entirety.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to thermal treatment apparatus for heat-treating a semiconductor wafer, glass substrate and the like, a method for manufacturing a semiconductor device, and a method for manufacturing a semiconductor wafer or a glass substrate.[0004]2. Background Art[0005]When a plural number of substrates such as silicon wafers are heat-treated using, for example, a vertical heat treatment furnace, a substrate support (boat) made of silicon carbide is used. In the substrate support, for example, a supporting groove for supporting a substrate...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L21/30H01L21/00H01L21/673
CPCH01L21/67098H01L21/67309H01L21/67306H01L21/324H01L21/02
InventorNAKAMURA, NAOTONAKAMURA, IWAOSHIMADA, TOMOHARUISHIGURO, KENICHINAKASHIMA, SADAO
OwnerKOKUSA ELECTRIC CO LTD