Phase change based heating element system and method

a heating element and phase change technology, applied in the field of phase change based heating element system and method, can solve the problem of lack of meaningful surface tension, and achieve the effect of preventing overheating

Inactive Publication Date: 2010-01-07
SUPERCRITICAL SYSEMS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This method effectively prevents phase changes and contaminants from forming, ensuring a cleaner and more reliable supercritical carbon dioxide cleaning process for semiconductor wafers by maintaining a stable supercritical state, thereby reducing particle deposition and improving processing efficiency.

Problems solved by technology

In addition, sc-CO2 lacks any meaningful surface tension while interacting with solid surfaces, and hence, can readily penetrate high aspect ratio geometrical features more readily than liquid CO2.

Method used

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  • Phase change based heating element system and method
  • Phase change based heating element system and method
  • Phase change based heating element system and method

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Embodiment Construction

[0014]Embodiments of the present invention disclose a pre-injection assembly that enables the injection of a temperature-controlled high-pressure processing fluid / solution into a closed loop environment. The closed loop environment is preferably under high pressure. In one embodiment, the high-pressure system can exceed 3,000 psi.

[0015]FIG. 1 shows an exemplary block diagram of a processing system in accordance with an embodiment of the invention. In the illustrated embodiment, processing system 100 comprises a process module 110, a recirculation system 120, a process chemistry supply system 130, a high-pressure fluid supply system 140, an exhaust control system 150, a pressure control system 160, a pre-injection assembly 170, and a controller 180. The processing system 100 can operate at pressures that can range from 1000 psi. to 10,000 psi. In addition, the processing system 100 can operate at temperatures that can range from 40 to 300 degrees Celsius.

[0016]The details concerning ...

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Abstract

A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

Description

FIELD OF THE INVENTION[0001]This invention relates to the field of particle prevention techniques in cleaning silicon wafers. More particularly, the present invention relates to the field of reducing substrate material contaminants during supercritical carbon dioxide processes.BACKGROUND OF THE INVENTION[0002]Carbon Dioxide (CO2) is an environmentally friendly, naturally abundant, non-polar molecule. Being non-polar, CO2 has the capacity to dissolve in and dissolve a variety of non-polar materials or contaminates. The degree to which the contaminants found in non-polar CO2 are soluble is dependant on the physical state of the CO2. The four phases of CO2 are solid, liquid, gas, and supercritical. These states are differentiated by appropriate combinations of specific pressures and temperatures. CO2 in a supercritical state (sc-CO2) is neither liquid nor gas but embodies properties of both. In addition, sc-CO2 lacks any meaningful surface tension while interacting with solid surfaces,...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): C23F1/08
CPCG03F7/427H01L21/02057H01L21/67248H01L21/67109H01L21/02101
InventorBERTRAM, RONALD T.HILLMAN, JOSEPH TBIBERGER, MAXIMILIAN A
OwnerSUPERCRITICAL SYSEMS