Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device

Active Publication Date: 2011-10-06
MITSUI CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0018]According to the present invention, it is possible to provide a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to

Problems solved by technology

In a porous interlayer dielectric layer for a semiconductor such as this, there has been a problem in that when the porosity is increased to further lower the dielectric constant, it becomes easier for a metal compo

Method used

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  • Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device
  • Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device
  • Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device

Examples

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example 1

[0201]A polyethyleneimine aqueous solution 1 (PEI, manufactured by BASF SE, weight-average molecular weight: 25,000, 250 mg / 100 mL, pH: 10.52, cationic functional group equivalent weight: 309) was made to contact the interlayer dielectric layer obtained in the above process (hereinafter, also referred as “low-k”) using a commercially available spraying bottle (AIR-BOY, manufactured by Carl Roth GmbH) by a spraying method (solution contact time: 20 sec, spraying distance: 10 cm). Next, water was made to contact the interlayer dielectric layer using a similar spraying bottle by a spraying method (contact time with ultrapure water: 10 sec, spraying distance: 10 cm). After drying by air blowing, a resin layer was formed on the interlayer dielectric layer. After being stored in a constant-temperature and constant-humidity environment of 23° C. and 55% for 15 hours or longer, the sample (low-k / PEI) was subjected to the following evaluation.

[0202]The water used in the above process was ult...

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Abstract

The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Description

TECHNICAL FIELD[0001]The present invention relates to a composition for sealing a semiconductor, a semiconductor device, and a process for producing a semiconductor device.BACKGROUND ART[0002]In the field of semiconductor devices, in which miniaturization has been advancing, various materials having a porous structure and a low dielectric constant (hereinafter, also referred to as “low-k materials”) have been studied as a material for an interlayer dielectric layer for a semiconductor.[0003]In a porous interlayer dielectric layer for a semiconductor such as this, there has been a problem in that when the porosity is increased to further lower the dielectric constant, it becomes easier for a metal component, such as copper that is embedded as an interconnection material, to intrude into pores of the interlayer dielectric layer for a semiconductor, thereby increasing the dielectric constant or causing leak currents.[0004]In contrast, Japanese National Phase Publication No. 2009-503879...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L21/31C08L79/00B82Y30/00
CPCH01L21/02362H01L21/76829H01L21/76831H01L21/02343Y10T428/1073H01L2924/0002H01L21/3105H01L2924/00C09K2323/055H01L21/02112
InventorONO, SHOKOKOHMURA, KAZUO
OwnerMITSUI CHEM INC