Image pickup apparatus and image pickup system
a technology of image pickup and image, which is applied in the direction of television system, television system, and radio control device, etc., can solve the problems of greater problems and inability to obtain appropriate signals
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first embodiment
[0043]FIG. 2 is a schematic diagram illustrating upper surfaces of photoelectric conversion units 201 of an image pickup apparatus 100 according to the present embodiment. A microlens 202 is provided for each photoelectric conversion unit 201. In addition, each photoelectric conversion unit 201 includes a plurality of photoelectric conversion elements. In FIG. 2, each photoelectric conversion unit 201 includes two PDs, namely a left PD 203 and a right PD 204, but the number of PDs may be two or more. For example, four PDs or nine PDs may be included. Transfer gates 205 and 206 transfer charge generated in the PD 203 and the PD 204, respectively, to a floating diffusion region 207. Although the floating diffusion region 207 is shared by the two PDs 203 and 204 in FIG. 2, a floating diffusion region may be provided for each PD, instead. Although the two photoelectric conversion units 201 are illustrated in FIG. 2, a larger number of photoelectric conversion units may be provided, inst...
second embodiment
[0065]The present embodiment will be described with reference to the drawings. Components having the same functions as in the first embodiment are given the same reference numerals, and detailed description thereof is omitted. FIGS. 6A and 6B are diagrams illustrating the cross-sectional structure of photoelectric conversion units according to the present embodiment. FIG. 6A schematically illustrates the cross-sectional structure of a portion taken along a dash-dot line VI-VI illustrated in FIG. 2, and FIG. 6B schematically illustrates the minimum potential of a portion taken along a broken line VIB-VIB illustrated in FIG. 6A.
[0066]A difference from the first embodiment is that a p-type semiconductor region provided between photoelectric conversion elements included in a single photoelectric conversion unit is configured by a first part whose concentration is low and second parts whose concentrations are higher than the concentration of the first part. More specifically, the p-type ...
third embodiment
[0072]A third embodiment will be described with reference to the drawings. FIG. 7 is a diagram illustrating the planar structure of pixels according to the present embodiment viewed from a light incident side. Components having the same functions as in the first and second embodiments are given the same reference numerals, and detailed description thereof is omitted. A difference of the present embodiment from the second embodiment is that a first part 701 and a second part 702 are provided at different positions between n-type semiconductor regions that configure adjacent PDs in the same photoelectric conversion unit when viewed in plan. With respect to other configurations, the same configurations as in the first and second embodiments may be used.
[0073]In FIG. 7, a p-type semiconductor region provided between photoelectric conversion elements PD1 and PD2 included in a single photoelectric conversion unit is configured by including the first part 701 and the second part 702 whose ...
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