Image pickup apparatus and image pickup system

a technology of image pickup and image, which is applied in the direction of television system, television system, and radio control device, etc., can solve the problems of greater problems and inability to obtain appropriate signals

Active Publication Date: 2013-07-18
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes an image pickup apparatus that has multiple photoelectric conversion units, each containing multiple photoelectric conversion elements. These elements are designed to collect signal carriers and produce electrical signals. The invention aims to optimize the performance of the apparatus by controlling the potential barrier for signal carriers in the second semiconductor region, which is adjacent to the first semiconductor region. The technical effect of this innovation is to improve the image quality and resolution of the image pickup apparatus.

Problems solved by technology

Especially because the photoelectric conversion elements are located adjacent to various elements, an appropriate signal might not be obtained depending on isolation structure between the adjacent elements.
This is a process that may be performed not only in an application such as phase difference detection but also in various applications, and greater problems may arise as the application field of image pickup apparatuses develops.

Method used

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  • Image pickup apparatus and image pickup system

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Experimental program
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Effect test

first embodiment

[0043]FIG. 2 is a schematic diagram illustrating upper surfaces of photoelectric conversion units 201 of an image pickup apparatus 100 according to the present embodiment. A microlens 202 is provided for each photoelectric conversion unit 201. In addition, each photoelectric conversion unit 201 includes a plurality of photoelectric conversion elements. In FIG. 2, each photoelectric conversion unit 201 includes two PDs, namely a left PD 203 and a right PD 204, but the number of PDs may be two or more. For example, four PDs or nine PDs may be included. Transfer gates 205 and 206 transfer charge generated in the PD 203 and the PD 204, respectively, to a floating diffusion region 207. Although the floating diffusion region 207 is shared by the two PDs 203 and 204 in FIG. 2, a floating diffusion region may be provided for each PD, instead. Although the two photoelectric conversion units 201 are illustrated in FIG. 2, a larger number of photoelectric conversion units may be provided, inst...

second embodiment

[0065]The present embodiment will be described with reference to the drawings. Components having the same functions as in the first embodiment are given the same reference numerals, and detailed description thereof is omitted. FIGS. 6A and 6B are diagrams illustrating the cross-sectional structure of photoelectric conversion units according to the present embodiment. FIG. 6A schematically illustrates the cross-sectional structure of a portion taken along a dash-dot line VI-VI illustrated in FIG. 2, and FIG. 6B schematically illustrates the minimum potential of a portion taken along a broken line VIB-VIB illustrated in FIG. 6A.

[0066]A difference from the first embodiment is that a p-type semiconductor region provided between photoelectric conversion elements included in a single photoelectric conversion unit is configured by a first part whose concentration is low and second parts whose concentrations are higher than the concentration of the first part. More specifically, the p-type ...

third embodiment

[0072]A third embodiment will be described with reference to the drawings. FIG. 7 is a diagram illustrating the planar structure of pixels according to the present embodiment viewed from a light incident side. Components having the same functions as in the first and second embodiments are given the same reference numerals, and detailed description thereof is omitted. A difference of the present embodiment from the second embodiment is that a first part 701 and a second part 702 are provided at different positions between n-type semiconductor regions that configure adjacent PDs in the same photoelectric conversion unit when viewed in plan. With respect to other configurations, the same configurations as in the first and second embodiments may be used.

[0073]In FIG. 7, a p-type semiconductor region provided between photoelectric conversion elements PD1 and PD2 included in a single photoelectric conversion unit is configured by including the first part 701 and the second part 702 whose ...

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PUM

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Abstract

In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]One disclosed aspect of the embodiments relates to an image pickup apparatus and, more specifically, to isolation structure between photoelectric conversion elements.[0003]2. Description of the Related Art[0004]Currently, in a photoelectric conversion apparatus, there is a case in which signals generated in a plurality of photoelectric conversion elements are processed as a signal of a single pixel. For example, a technology has been disclosed in which focus detection using a phase difference method is performed by focusing light onto a plurality of photoelectric conversion elements using a single microlens. For example, as described in Japanese Patent Laid-Open No. 2001-250931, focus detection is performed by separately reading signals of photoelectric conversion elements corresponding to a single microlens. Thereafter, by adding the signals of the photoelectric conversion elements corresponding to the single microlens...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L31/02H04N5/369H04N25/00H04N25/46
CPCH01L31/02H04N5/369H01L27/14607H01L27/1461H01L27/1463H01L27/14656H04N5/355H01L27/14627H01L27/14641H01L27/14645H01L27/14654H04N5/3559H01L27/14689H01L27/146H01L27/14601H01L27/14643H01L27/14621H04N25/70H01L28/40H04N25/57H04N25/59
InventorKOBAYASHI, MASAHIROKISHI, TAKAFUMIYAMASHITA, YUICHIRO
OwnerCANON KK