Optoelectronic device

a technology of optoelectronic devices and optical components, applied in the direction of basic electric elements, semiconductor devices, electrical equipment, etc., can solve the problems of reducing the reflectivity of diffusion barriers and having some disadvantages, and achieve the effect of reducing thickness

Inactive Publication Date: 2017-02-09
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This design improves light extraction efficiency and simplifies the fabrication process, leading to increased performance and efficiency in light emitting devices and modules.

Problems solved by technology

The diffusion barrier may have some disadvantages concerning reflectivity.

Method used

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Examples

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Embodiment Construction

[0018]The embodiments of the present disclosure disclose a light emitting device and a fabrication method of the device. For a better understanding of the invention, reference is made to a detailed description to be read in conjunction with FIGS. 3A˜7.

[0019]FIGS. 3A˜3E show a process flow of fabricating a first embodiment of the present disclosure. As FIG. 3A shows, a substrate 30 is provided, a semiconductor epitaxial stack 32 is formed above the substrate 30, wherein the semiconductor epitaxial stack 32 comprises, from bottom up, a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The semiconductor epitaxial stack 32 further comprises an upper surface 321 not adjacent to the substrate 30, wherein the upper surface 321 comprises a first epitaxial region 3211 and a second epitaxial region 3212.

[0020]The substrate 30 serves as a growing and / or bearing foundation, which may be a conductive substrate or an insulative substrate...

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Abstract

An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and / or a second angle formed between the second boundary and the semiconductor stack, is / are less than 10°.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application is a divisional application of U.S. application Ser. No. 14 / 537,058 filed on Nov. 10, 2014, now issued, which claims the priority to and the benefit of TW application Ser. No. 102140976 filed on Nov. 11, 2013, and the content of which is hereby incorporated by reference in its entirety.BACKGROUND OF THE DISCLOSURE[0002]Technical Field[0003]This present application relates to an optoelectronic device, which is especially related to an electrode design of an optoelectronic device.[0004]Description of the Related Art[0005]The light radiation theory of light emitting diode (LED) is to generate light from the energy released by the recombination of the charge carriers between an n-type semiconductor and a p-type semiconductor. Because the light radiation theory of LED is different from the incandescent light which heats the filament, the LED is called a “cold” light source. Moreover, the LED is more sustainable, longevous, ligh...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L33/38H01L33/40H01L33/28H01L33/30H01L33/32
CPCH01L33/38H01L33/30H01L2933/0016H01L33/28H01L33/405H01L33/32H01L33/0095H01L33/60H01L2224/48091H01L2224/73265H01L2924/00014
InventorWANG, JIA-KUENSHEN, CHIEN-FUCHEN, HUNG-CHECHEN, CHAO-HSING
OwnerEPISTAR CORP