Indium nitride layer production
a technology of indium nitride and innium nitride, which is applied in the direction of electrolytic capacitors, coatings, light-sensitive devices, etc., can solve the problems of degrading the electronic properties of the inn, the inn itself is little known, and the use of the inn is not widespread enough,
Inactive Publication Date: 2010-04-13
CENT NAT DE LA RECHERCHE SCI +1
View PDF3 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The present invention proposes a structure for use in electronics, optics, or optoelectronics. The structure includes a film made of an alloy of at least one atomic element of Group II of the Periodic Table and / or at least one atomic element of Group IV of the Periodic Table and of N2. The structure also includes a film of InN. The technical effect of this invention is to improve the performance of the structure in its various applications.
Problems solved by technology
Indium nitride InN itself has remained little known and little used, owing to the difficulty of fabricating it.
One difficulty lies in the choice of crystalline support for producing such crystal growths, said support having to have physical parameters sufficiently close to the material to be deposited, especially as regards crystal structure and lattice parameters.
However, the difference in lattice parameter between the InN film and the sapphire substrate is about 25%, which is still much too large for obtaining an InN film of satisfactory crystalline quality, the presence of internal defects and stresses degrading its electronic properties.
These techniques using pseudosubstrates or nucleation films can still be lengthy, complex and expensive to implement.
Moreover, they still have not given optimum results as regards the structure of the InN film finally obtained, defects and stresses in particular remaining therein.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025]Other possible features of this structure are:[0026]the film of InN is on the film made of II-IV-N2 alloy;[0027]the structure further includes, beneath the II-IV-N2 alloy, a support structure made of AlN, GaN, SiC or Si;[0028]the structure further includes, beneath this support structure, a crystalline support substrate;[0029]the film of II-IV-N2 has a sufficient thickness to be a buffer layer between the support structure and the InN film, and especially by confining crystallographic defects within it;[0030]the formula of the II-IV-N2 alloy is chosen from the following possible combinations: (Mg,Ca,Zn,Cd)—(C,Si,Ge,Sn,Pb)—N2; and[0031]the II-IV-N2 alloy and / or the InN alloy further includes at least one doping element.
[0032]According to a second aspect, the invention proposes a process for producing an indium nitride film, characterized in that it includes a crystal growth step in which an InN film is grown on a film made of an alloy of at least one atomic element of Group II ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| temperature | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and / or at least one element of the column IV of the periodic elements system and of N2 (said alloy being noted N-IV-N2), wherein said structure also comprises an InN layer. A method for producing an indium nitride layer, a substrate forming plate and the use thereof for indium nitride growth are also disclosed.
Description
CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a National Stage application of PCT / FR2005 / 002275, filed Sep. 14, 2005, which claims priority from French patent application FR 0409813, filed Sep. 16, 2004.[0002]The present invention relates to the production of indium nitride (InN).[0003]Semiconductor nitrides (InN, GaN, AlN) have been the subject of very many studies over the last ten years. Electronic components of very high performance based on these materials have in fact been produced, fabricated on an industrial scale and commercialized.[0004]Indium nitride InN itself has remained little known and little used, owing to the difficulty of fabricating it.[0005]Recently, fresh efforts have been made to improve the fabrication of this material and to determine its physical properties. Fundamental characteristics, such as the bandgap, have been completely reviewed and the potential of this material for electronic components has been confirmed.[0006]Thus, for example...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityPatents(United States)
IPC IPC(8): H01L29/20H01L21/20H01L21/205H01L33/26
CPCH01L21/0237H01L21/02439H01L33/26H01L21/0254H01L21/02617H01L21/02502
InventorGIL, BERNARDBRIOT, OLIVIER GERARD SERGERUFFENACH, SANDRAMALEYRE, BENEDICTECLOITRE, THIERRY JOSEPH ROLANDAULOMBARD, ROGER-LOUIS
OwnerCENT NAT DE LA RECHERCHE SCI