Silicon carbide mosfet device and manufacturing method thereof

A silicon carbide and device technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as device or ion implanter pollution, device thermal burnout, current amplification, etc., to improve the ability to resist UIS failure, Suppress the effect of opening

CN105762176BInactive Publication Date: 2018-11-09UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-11-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a silicon carbide MOSFET device and a manufacturing method thereof. The device includes a drain metal, an N+ substrate, and an N-drift region; grooves are arranged inside the N-drift region, and the manufacturing method includes the steps of: etching on an epitaxial wafer The groove is formed at the same time as the lithographic alignment mark; polysilicon is deposited on the N-epitaxy and etched to form an ion implantation barrier pattern; the polysilicon is used as a mask to form a P-type base region by aluminum ion implantation; Oxide silicon and reverse etch to form side walls, use self-alignment process nitrogen ion implantation to form N+ source region; remove polysilicon and silicon dioxide, deposit a layer of polysilicon and form ion implantation barrier pattern; aluminum ion implantation to form P+ contact area ; remove the polysilicon, perform ion implantation activation annealing and gate oxide oxidation; the present invention not only realizes the channel self-alignment process, but also makes the P+ contact region deep, effectively suppressing the opening of the parasitic BJT transistor, and improving the silicon carbide to a certain extent. Anti-UIS failure capability of MOSFET devices.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, in particular to a silicon carbide MOSFET device and a manufacturing method thereof, which relate to a channel self-alignment process. Background technique

[0002] Silicon carbide (Silicon Carbide) material, as one of the representatives of the third-generation wide bandgap semiconductor materials, has the characteristics of large bandgap width, high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity, making it suitable for high-power , high temperature and high frequency power electronics has broad application prospects.

[0003] Silicon carbide MOSFET has low on-resistance and small switching loss, which is more suitable for high-frequency operation. In addition, it also has excellent electrical characteristics in high-temperature regions, and has gradually become a new generation of mainstream low-loss power devices.

[0004] ...

Examples

Embodiment Construction

[0043] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0044]A silicon carbide MOSFET device, comprising a drain metal 7, an N+ substrate 6 above the drain metal 7, and an N-drift region 5 above the N+ substrate 6; a recess is provided in the middle of the N-drift region 5 Groove 11, the first P-type base region 8 is on the left side of the groove 11, and the second P-type base region 81 is on the right side; a first N+ source region 9 is provided above the first P-type base region 8; The...