1results about How to "Increased avalanche tolerance" patented technology

The utility model relates to the technical field of transistor protection, and discloses a high-voltage MOS terminal protection structure with high avalanche tolerance, which comprises a high-voltage MOS device, the high-voltage MOS device is provided with a cellular area and a terminal protection area, the cellular area is also provided with a shield grid used for reducing on-resistance and increasing breakdown voltage, and the terminal protection area is provided with a terminal protection area. The longitudinal section of the shield grid is arranged in a trapezoid shape, the field limiting rings with the gradually-decreased spacing can widen the width of a depletion region, improve the transverse voltage endurance capability of the MOS device, reduce the peak value of an edge electric field, transfer the peak point of an electric field through a slope field plate and eliminate a grid angle distortion electric field, and the shield grid reconstructs the electric field to be distributed in a trapezoid shape and optimizes a longitudinal electric field. Therefore, the breakdown voltage of the MOS device is improved, and the avalanche trigger threshold is remarkably improved; through the design of the drain buffer layer, a large amount of high-energy carrier kinetic energy can be absorbed, the channel thermal shock can be reduced, the local temperature peak value can be reduced, the two metal layers are utilized to assist heat dissipation, double-path heat conduction is realized, and the avalanche tolerance is improved.