Power transistor and manufacturing method thereof

A technology for power transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reduced device reliability, insufficient improvement in avalanche tolerance, and increased device temperature rise.
CN106920846APending Publication Date: 2017-07-04深圳深爱半导体股份有限公司
11 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
深圳深爱半导体股份有限公司
Publication Date
2017-07-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a power transistor and a manufacturing method thereof. A cell structure of the power transistor comprises a first conductive type of substrate, a second conductive type of well region on the substrate, a first conductive type of source region in the well region and a gate above the well region, wherein the first conductive type and the second conductive type are opposite conductive types, the power transistor is characterized in that the cell structure also comprises a hole current blocking region, the hole current blocking region wraps at least one part of the well region and is in the second conductive type, the doping concentration of the hole blocking region is smaller than the doping concentration of the well region, and the hole current blocking region extends to a part below a gate adjacent to the gate from a part below the gate. By the power transistor, the avalanche tolerance of the power transistor can be improved, the conventional parameter of a device is not affected, and meanwhile, the reliability of the device working in an inductive load environment is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a power transistor and a method for manufacturing the power transistor. Background technique

[0002] Due to the particularity of the use environment and conditions of use, modern electronic circuits have higher and higher requirements for the reliability of power semiconductor devices. Power semiconductor devices (power VDMOS, power IGBT, etc.) are often connected to inductive load circuits due to the needs of use. When the device is turned off, the inductance on the inductive load can generate a voltage twice the power supply voltage applied to the load circuit, which is added between the drain and source of the device, causing the drain and source of the device to withstand a large current impact. When the drain voltage increases and cannot be pinched off, the device enters the avalanche region. At this time, the drain-body diode will generate current carriers, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More