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Fast recovery epitaxial diode (FRED) and preparation method thereof

A fast recovery, diode technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of hard reverse breakdown characteristics, low avalanche resistance, poor anti-avalanche performance, etc., to achieve redistribution. Effect

Inactive Publication Date: 2013-06-26
MACMIC SCIENCE & TECHNOLOGY CO LTD
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  • Abstract
  • Description
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Problems solved by technology

Through analysis and practical application, it is found that the reverse breakdown characteristics of the existing FRED similar to FRED 10 structure are relatively "hard" (that is, the rate of current increase (di / dt) after breakdown occurs is very fast, and the current increase The faster the rate, the more "hard" the performance), which reflects that the avalanche breakdown is easy to occur in an instant
Therefore, its anti-avalanche performance is poor, that is, the avalanche tolerance of FRED's PN junction is small

Method used

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  • Fast recovery epitaxial diode (FRED) and preparation method thereof
  • Fast recovery epitaxial diode (FRED) and preparation method thereof
  • Fast recovery epitaxial diode (FRED) and preparation method thereof

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preparation example Construction

[0069]Fig. 6 is a schematic flow diagram of the method for preparing the FRED of the embodiment shown in Fig. 3 according to an embodiment of the present invention; Fig. 7 to Fig. 13 are schematic diagrams of structural changes corresponding to the method flow shown in Fig. 6 . The preparation process of the FRED 30 of the present invention will be described in detail below with reference to FIGS. 6 to 13 .

[0070] First, step S510 , providing an N-type substrate region and an N-type epitaxial region formed by epitaxial growth on the N-type substrate region.

[0071] In this step, as shown in FIG. 7, the N-type substrate region 31 can be selected as a phosphorus-doped N+ silicon substrate, and its doping concentration range can be 1×10 19 / cm 3 -1×10 21 / cm 3 ; The N-type doping concentration of the epitaxial region 33 is relatively low and substantially constant. Taking FRED with a working voltage of 1200 volts as an example, its doping concentration can be roughly set at...

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Abstract

The invention provides an FRED and a preparation method thereof and belongs to the technical field of power apparatuses. A P-type semiconductor doping layer of an anode region for forming a PN junction of the FRED comprises a first P-type semiconductor region, a second P-type semiconductor region and a third P-type semiconductor region, and the doping concentration of the first P-type semiconductor region, the second P-type semiconductor region and the third P-type semiconductor region increases progressively successively. In a preparation method of the FRED, the first P-type semiconductor region, the second P-type semiconductor region and the third P-type semiconductor region are formed through three doping steps, and accordingly, the doping concentration of P-type semiconductor doping layers is redistributed. The FRED is high in the avalanche resistance and relatively 'soft' in the reverse breakdown characteristic and particularly suitable for being used in series or as fly-wheel diode of insulated gate bipolar translator (IGBT).

Description

technical field [0001] The invention belongs to the technical field of power devices, and relates to an epitaxial fast recovery diode (Fast Recovery Epitaxial Diode, FRED) with high avalanche tolerance and a method for preparing the FRED. Background technique [0002] Epitaxial fast recovery diode (FRED) is a new type of semiconductor power device formed by CMOS process technology. It is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in switching power supplies and pulse width modulators. In electronic circuits such as inverters, it can be used as a high-frequency rectifier diode, freewheeling diode or damping diode. [0003] A Chinese patent with the application number CN201010140971.8 and titled "Fast Recovery Diode" discloses a fast recovery diode with good forward recovery characteristics and reverse recovery characteristics. The P-type semiconductor doped layer of the diode includes P+ and P-doped regions. F...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 贺东晓吴迪王晓宝周锦源
Owner MACMIC SCIENCE & TECHNOLOGY CO LTD
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