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35results about How to "Small characteristic deviation" patented technology

Multilayer coil component and method for manufacturing the same

Provided is a highly reliable multilayer coil component wherein migration of Ag constituting an inner conductor is controlled, problem of internal stress is relaxed without forming an air gap between a magnetic ceramic layer and an inner conductor layer, DC resistance is lowered, and disconnection of an inner conductor due to a surge is prevented from occurring easily. A metal film (20) is distributed over the surface of an inner conductor (2), so that an air gap does not exist on the interface (A) of the inner conductor (2) including the metal film (20) and a magnetic ceramic (11) on the periphery of the inner conductor, and the interface (A) of the inner conductor (2) and the magnetic ceramic (11) is in a dissociative state. An acid solution containing a metal is infiltrated from the side surface of a magnetic ceramic element via a side gap portion, i.e. a region between the side portion of the inner conductor and the side surface of the magnetic ceramic element, so as to reach the interface of the inner conductor and the magnetic ceramic on the periphery thereof, and thus the metal is deposited on the surface of the inner conductor.
Owner:MURATA MFG CO LTD

Thin film transistor manufacturing method, thin film transistor and display device using the same

The present invention provides a film transistor, a manufacturing method thereof and a display using the film transistor. The film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession.; The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.
Owner:SONY CORP

Antenna input tuning circuit

An antenna input tuning circuit comprising a variable tuning filter (11) for making the tuning frequency fF variable by selecting any one of resistor elements through switching, and an oscillation circuit (12) constituted similarly to the variable tuning filter (11), wherein the oscillation frequency fL of the oscillation circuit (12) monitored by a frequency counter (13) is compared with a desired receiving frequency fr preset by a control circuit (14) based on respective frequency counts, oscillation frequency fL of the oscillation circuit (12) is varied such that the both frequencies coincide within an allowable error range and then the tuning frequency fF of the variable tuning filter (11) is varied correspondingly, thus regulating the tuning frequency fF of the variable tuning filter (11) to coincide with the desired receiving frequency fr without using a variable capacitance diode or the like hard to go IC-based.
Owner:NEURO SOLUTION CORP

Non-volatile semiconductor storage device and method of manufacture thereof

Provided is a nonvolatile semiconductor memory device including a variable resistance element in which a parasitic resistance between the lower electrode and the variable resistance layer included in the variable resistance element is reduced. The nonvolatile semiconductor memory device includes: a substrate; and a variable resistance element formed on the substrate, wherein the variable resistance element includes a lower electrode layer formed on the substrate, a variable resistance layer formed on the lower electrode layer, and an upper electrode layer formed on the variable resistance layer, the lower electrode layer includes at least a first conductive layer and a second conductive layer which is formed on the first conductive layer and is in contact with the variable resistance layer, and the first conductive layer includes an oxidatively degraded layer which is formed on an upper surface of the first conductive layer due to oxidization of the first conductive layer.
Owner:PANASONIC SEMICON SOLUTIONS CO LTD

Semiconductor laser

The present invention provides a semiconductor laser such as a Fabry-Perot type laser diode with small characteristic deviation and high slope efficiency or a distributed feedback type laser diode capable of suppressing backhaul optical noise. In a semiconductor laser in which a dielectric film is formed on at least one laser emission surface, as the dielectric film, the wavelength dependence of the reflectivity on the emission surface becomes maximum or minimum near the oscillation wavelength of the laser, and the oscillation wavelength of the laser is at the emission wavelength. A multi-layered film of various dielectric materials whose surface reflectance is set to be 10% or more and 25% or less.
Owner:MITSUBISHI ELECTRIC CORP

Semiconductor device and method of manufacturing same

To provide a semiconductor device having a memory cell equipped with a control gate electrode and a memory gate electrode adjacent to each other via a charge storage layer and having improved performance. In a semiconductor device having a MISFET including a gate electrode which is a metal gate electrode formed by a so-called gate last process, a control gate electrode and a memory gate electrode which include a memory cell of a split-gate type MONOS memory are formed by fully siliciding a silicon film.
Owner:RENESAS ELECTRONICS CORP

Semiconductor device and method for evaluating characteristics of the same

A single evaluation portion is formed by disposing a plurality of MIS transistors used for evaluation having substantially the same structure as that of an actually used MIS transistor. In the evaluation portion, the respective source regions, drain regions, and gate electrodes of the MIS transistors used for evaluation are electrically connected in common to a source pad, a drain pad, and a gate pad, respectively. If the effective gate width of the single evaluation portion exceeds a given value, variations in characteristics evaluated by the evaluation portion approach variations in the characteristics of the entire semiconductor device. The accuracy of evaluating the characteristics of the semiconductor device can thus be improved by using the evaluation portion.
Owner:PANASONIC CORP

Gyrotron and electronic device using same

A columnar vibrator (2) that performs open-ended bending vibration is mounted on one main surface of the mounting substrate (12), and a drive detection circuit is mounted across the abdomen centerline (n2) of the bending vibration caused by the resonance of the mounting substrate (12). Use part (13). In addition, the self-resonant frequency of the flexural vibration of the mounting substrate (12) is lower than that of the vibrator (2), and the self-resonant frequency of the flexural vibration after the vibrator (2) and the drive detection circuit parts (13) are mounted is lower than that of the vibrator (2). The self-resonance frequency of the bending vibration of the monomer is high, and is inconsistent with the bending vibration frequency of the vibrator (2). The present invention provides a vibrating top and an electronic device using the vibrating gyroscope with little change in characteristics between the time of characteristic adjustment before cover mounting and the completion time after cover mounting, although it has a thin mounting substrate and can be reduced in height.
Owner:MURATA MFG CO LTD

Laminated coil component

Provided is a highly reliable laminated coil component which does not require an opening to be formed between a ferrite layer and an internal conducting layer as conventionally, and enables alleviation of the internal stress between the ferrite layer and internal conducting layer caused by the difference between the firing shrinkage behavior and thermal expansion coefficient. A process is prepared for dissociating the boundary between the internal conductor (2) and the surrounding ferrite (11). This is done by enabling a complexing agent solution to reach a boundary between an internal conductor and ferrite (11) surrounding it by passing it from a side surface (3a) of a ferrite element (3) containing a spiral-shaped coil (4) and then through a side gap part (8). As the complexing agent solution, a solution is used that includes at least one substance selected from a group comprising aminocarboxylic acid and its salt, oxycarboxylic acid and its salt, amine, phosphoric acid and its salt and a lactone compound.
Owner:MURATA MFG CO LTD

Water-Dispersed Electrodeposition Liquid For Forming Insulating Coating Film

A water-dispersed electrodeposition liquid for forming an insulating coating film, which contains polymer particles, an organic solvent, a basic compound and water, and wherein: the polymer particlesare formed from a polyamic acid having a predetermined structural unit; and the polymer particles have a volume-based median diameter (D50) of 0.08-0.7 mum.
Owner:MITSUBISHI MATERIALS CORP

Lens drive device, auto-focusing camera and mobile terminal device with camera

InactiveCN103630996AEasy elastic deformationDeviation of small spring characteristicsDynamo-electric machinesMountingsOptical axisTerminal equipment
The invention provides a lens drive device, an auto-focusing camera and a mobile terminal device with the camera. The lens drive device provided by the invention comprises a moving body, a fixed body which accommodates the moving body on the inner peripheral side, a drive part which belongs to at least one of the moving body or the fixed body and produces a drive force to drive the moving body to move, and an elastic supporting body which elastically supports the moving body relative to the fixed body. The elastic supporting body comprises a fixed body side part which is fixed on the fixed body, a moving body side part which is fixed on the moving body, and a fine-plate-shaped wrist part which connects the fixed body side part and the moving body side part. The elastic supporting body is a plate-shaped body which uses the thickness direction as the direction of an optical axis. According to the wrist part, the size in the width direction is greater than the size in the thickness direction, and a reversing part is comprised. The reversing part comprises a bent part which is bent and is vertically arranged in the direction of the optical axis along a curved line which passes through a reversing start part and a reversing end part. The elastic supporting body can powerfully reduce characteristic deviation produced by shock and vibration.
Owner:NEW SHICOH MOTOR CO LTD

Transistor, display device, electronic device and fabrication method of transistor

An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.
Owner:SOLAS OLED LTD

display device

A display device comprising: a display element (OLED) that emits light by current flow; a driving transistor (M D1 ), which controls the current flowing in the display element (OLED); and a plurality of diode-connected transistors (M D2 , M D3 ), connected in series to the drive transistor (M D1 ) on the source side of the drive transistor (M D1 ) is connected to the back gate of the drive transistor (M D1 ) or multiple diode-connected transistors (M D2 , M D3 ) of the source of any of the .
Owner:SHARP KK

Film-forming apparatus and film-forming method

Disclosed is an apparatus for forming a compound thin film on the surface of a substrate, which is held in a sputtering film formation chamber, by reactive sputtering. The sputtering film formation chamber is provided with a first film property-adjusting gas introducing means for introducing a film property-adjusting gas, which is used for adjusting the film properties of a compound thin film to be formed on the front surface of the substrate, onto the back surface of the substrate.
Owner:ULVAC INC

Transistor, display device, electronic device and fabrication method of transistor

The invention provides a transistor with a reduced characteristic deviation. An electric field shielding electrode (54) is disposed between a BL insulating film (53) of a transistor and a BL insulating film (55), and a barrier film (58) is composed of the three layers. The electric field shielding electrode (54) shields the electric field of a drain electrode (T1d), a source electrode (T1s) and a n+-Si film (56). Therefore, in various driven transistors, even if the alignment dislocation of the drain electrode (T1d), the source electrode (T1s) and the n+-Si film (56) is deviated and the overlapping part with an i-Si film (52) is enlarged, the electric field of the part is shielded by the electric field shielding electrode (54), and the characteristic deviation is reduced.
Owner:SOLAS OLED LTD

Manufacturing method of solid electrolyte

A method for producing a solid electrolyte comprising preparation of polymerization solution formed by dispersing materials that form an electrically conductive polymer by polymerization in a liquid medium, immersing a base substance in the polymerization solution, and carrying out electropolymerization while shaking the polymerization solution and base substance relative to each other. A dielectric layer is formed on the positive electrode surface, and a solid electrolyte layer is formed by the method for producing the solid electrolyte on the positive electrode on which the dielectic layer has been formed. Furthermore, an electrically conductive layer is laminated thereon using an electrically conductive paste, and a solid electrolyte capacitor is obtained by sealing the device obtained in a resin.
Owner:RESONAC HOLDINGS CORPORATION

Nonvolatile semiconductor memory device and manufacturing method thereof

Provided is a nonvolatile semiconductor memory device including a variable resistance element with reduced parasitic resistance between a lower electrode constituting the variable resistance element and a variable resistance layer. The non-volatile semiconductor storage device includes: a substrate (201); and a variable resistance element (208) formed on the substrate (201); the variable resistance element (208) has: a lower electrode layer (202), formed on the substrate ( 201); the variable resistance layer (203) is formed on the lower electrode layer (202); and the upper electrode layer (204) is formed on the variable resistance layer (203); the lower electrode layer (202) at least includes: the first a conductive layer (202a); and a second conductive layer (202c), formed on the first conductive layer (202a) and in contact with the variable resistance layer (203); a second conductive layer (202c) is formed on the upper surface of the first conductive layer (202a) 1 A conductive layer (202a) is oxidized, that is, an oxidatively degraded layer (202b).
Owner:PANASONIC SEMICON SOLUTIONS CO LTD

Semiconductor device

The invention relates to a semiconductor device. Provided is a semiconductor device including a Hall element, in which a depletion layer is prevented from spreading to a magnetism sensing portion morereliably, and thus variations in characteristic are reduced. The semiconductor device includes: a semiconductor substrate of a first conductivity type; and a Hall element formed on the semiconductorsubstrate, the Hall element having: a magnetism sensing portion of a second conductivity type formed on the semiconductor substrate so as to be separated from the semiconductor substrate; and a semiconductor layer of the second conductivity type formed so as to surround side surfaces and a bottom surface of the magnetism sensing portion on the semiconductor substrate and has a lower concentrationthan a concentration of the magnetism sensing portion and a uniform concentration distribution.
Owner:SII SEMICONDUCTOR CORP

Insulated gate semiconductor device

The invention discloses an insulated gate semiconductor device, the leading part of a gate lead wire leading the gate electrode of an MOSFET out of the surrounding of a substrate is not configured as an MOSFET having the same effect in an element region; namely if the gate lead wire is arranged along the periphery of a chip, the non-work region is increased, so that the situation of expanding the area of the element region and reducing the chip area are restrained. In the insulated gate semiconductor device, a gate lead wiring and an electrical conductor connecting the gate lead wiring to a protective diode are arranged in a straight line without bending along one and the same side of the chip. One bent portion or no bent portion is overlapped and extended on the upper parts of the gate lead wiring and the electrical conductor and connects them to the protective diode. Further, the protective diode is arranged adjacent to the electrical conductor or the gate lead wiring, and a portion of the protective diode is arranged in close proximity to a gate pad portion.
Owner:SEMICON COMPONENTS IND LLC

Diaphragm for micro-speaker and method of manufacturing the diaphragm

The present invention provides a diaphragm for a microspeaker, and a method of manufacturing the diaphragm. The diaphragm includes several thin film-shaped members made of polymer compounds and laminated mutually, wherein the thin films are engaged by ultrasonic welding program. The method includes preparing a mould, placing a first part on the mould to obtain a first part of the member in a required shape, placing a second part on the first part of the required shape, and welding the first part and the second part by the ultrasonic welding program.
Owner:BSE CO LTD +2

Field effect transistor, method for manufacturing the same and electronic device using the field effect transistor

A field effect transistor is provided with a semiconductor layer (14); a source electrode (15) and a drain electrode (16) which are electrically connected with the semiconductor layer (14); and a gate electrode (12) for applying electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) includes a plurality of fine wires, which are composed of inorganic semiconductor, and an organic semiconductor material.
Owner:PANASONIC CORP

Switching circuit

A switching circuit includes: a detection wiring configured to receive a potential changing depending on a current of a first switching element; a first circuit connected between the detection wiringand a first having a first time constant, and making the first wiring follow the potential of the detection wiring; a second circuit connected between the detection wiring and a second wiring, havinga second time constant larger than the first time constant, and making the second wiring fellow the potential of the detection wiring; a potential maintaining circuit configured to maintain the secondwiring at a potential higher than the potential of the first wiring while a current is not flow through the first switching element; and a control circuit configured to turn off the first switching element in a case where the potential of the first wiring exceeds the potential of the second wiring.
Owner:TOYOTA JIDOSHA KK

Thin film transistor manufacturing method, thin film transistor and display device using the same

The present invention provides a film transistor, a manufacturing method thereof and a display using the film transistor. The film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession.; The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drainelectrodes from the metal layer.
Owner:SONY CORP
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