35results about How to "Small characteristic deviation" patented technology

The present invention provides a ceramic electronic component that does not intrude into a ceramic body with a plating solution, and a ceramic electronic component manufacturing method for simply manufacturing such a ceramic electronic component. A ceramic electronic component includes a ceramic body on which terminal electrodes are formed on both end faces. The terminal electrode includes a sintered external electrode and a plating film formed thereon. In order to form the ceramic electronic component, a ceramic body having external electrodes is dipped in a water-repellent treatment agent, dried, and subjected to electroplating treatment. The water repellent treatment agent includes functional groups that are easily adsorbed on the external electrodes and functional groups that have hydrophobicity.

The invention provides a coil component for reducing characteristic deviation. The coil component includes a core and a coil that is wound around the core. The coil includes a plurality of pin members that are joined together.

A capacitor element is composed of a lower electrode, a ferroelectric film, and an upper electrode that are formed on a substrate. In the capacitor element, the ferroelectric film is formed by a reaction rate-determining method, and the lower electrode has a thickness of not more than 100 nm, and variation of the thickness of not more than 10%. With this, a capacitor element in which the composition variation of the ferroelectric film is suppressed, and a method for producing the same, are provided.

An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.

The object of the present invention is to provide a laminated coil device which has high reliability and does not form a conventional gap between the ferrite layer and the internal conductor layer, and can relax the gap between the ferrite layer and the internal conductor layer. Internal stress due to differences in firing shrinkage characteristics and thermal expansion coefficients. It has the following steps: that is, make the complexing agent solution pass through the side gap part (8) from the side 3a of the ferrite element (3) equipped with the helical coil (4) inside, and reach the ferrite around the inner conductor and its surroundings. (11), thereby separating the interface between the internal conductor (2) and its surrounding ferrite (11), and using a A solution of at least one of the group consisting of phosphoric acid, phosphoric acid and its salt, and lactone compound is used as a complexing agent solution.

Disclosed is an apparatus for forming a compound thin film on the surface of a substrate, which is held in a sputtering film formation chamber, by reactive sputtering. The sputtering film formation chamber is provided with a first film property-adjusting gas introducing means for introducing a film property-adjusting gas, which is used for adjusting the film properties of a compound thin film to be formed on the front surface of the substrate, onto the back surface of the substrate.

A method for producing a solid electrolyte comprising preparation of polymerization solution formed by dispersing materials that form an electrically conductive polymer by polymerization in a liquid medium, immersing a base substance in the polymerization solution, and carrying out electropolymerization while shaking the polymerization solution and base substance relative to each other. A dielectric layer is formed on the positive electrode surface, and a solid electrolyte layer is formed by the method for producing the solid electrolyte on the positive electrode on which the dielectic layer has been formed. Furthermore, an electrically conductive layer is laminated thereon using an electrically conductive paste, and a solid electrolyte capacitor is obtained by sealing the device obtained in a resin.

A water-based electrodeposition dispersion for forming an insulating film includes: polymer particles; an organic solvent; a basic compound; and water, wherein the polymer particles include polyamic acid having a predetermined structural unit, and a volume-based median diameter (D50) of the polymer particles is 0.08 μm to 0.7 μm.

The invention relates to a semiconductor device. Provided is a semiconductor device including a Hall element, in which a depletion layer is prevented from spreading to a magnetism sensing portion morereliably, and thus variations in characteristic are reduced. The semiconductor device includes: a semiconductor substrate of a first conductivity type; and a Hall element formed on the semiconductorsubstrate, the Hall element having: a magnetism sensing portion of a second conductivity type formed on the semiconductor substrate so as to be separated from the semiconductor substrate; and a semiconductor layer of the second conductivity type formed so as to surround side surfaces and a bottom surface of the magnetism sensing portion on the semiconductor substrate and has a lower concentrationthan a concentration of the magnetism sensing portion and a uniform concentration distribution.

A field effect transistor is provided with a semiconductor layer (14); a source electrode (15) and a drain electrode (16) which are electrically connected with the semiconductor layer (14); and a gate electrode (12) for applying electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) includes a plurality of fine wires, which are composed of inorganic semiconductor, and an organic semiconductor material.

The present invention provides a film transistor, a manufacturing method thereof and a display using the film transistor. The film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession.; The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drainelectrodes from the metal layer.

A column shape vibrator (2) that produces bending vibration with both ends unsupported is mounted on one principal surface of a mounting board (12), and a driving-and-detecting circuit component (13) is also mounted to cross over an antinode center line (n2) of bending vibration of the mounting board (12) due to resonance. The original self-resonance frequency of bending vibration of the mounting board (12) itself is lower than the frequency of bending vibration of the vibrator (2). The modified self-resonance frequency of bending vibration of the mounting board when the vibrator (2) and the driving-and-detecting circuit component (13) are mounted thereon is higher than the original self-resonance frequency, and does not coincide with the frequency of bending vibration of the vibrator (2). The invention provides a vibrating gyro which comprises a thin mounting board, whose height is low and whose characteristic change is small between its characteristic adjustment before mounting a cover and its completion after mounting the cover, and provides an electronic device using the vibrating gyro.