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Semiconductor device and method of manufacturing same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as the deterioration of transistor drive capability, achieve the effects of less characteristic deviation and improved performance

Inactive Publication Date: 2016-03-09
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] A MONOS memory or a MISFET having a gate electrode made of a semiconductor film has a problem of depletion in the gate electrode during inversion of the channel region, deteriorating the drive capability of the transistor

Method used

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  • Semiconductor device and method of manufacturing same
  • Semiconductor device and method of manufacturing same
  • Semiconductor device and method of manufacturing same

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no. 1 example

[0058] The semiconductor device according to the present embodiment and the following embodiments is equipped with a nonvolatile memory (nonvolatile memory element, flash memory, or nonvolatile semiconductor memory device). In this embodiment and the following embodiments, a description will be given of a nonvolatile memory by using a memory cell having an n-channel type MISFET (Metal Insulator Semiconductor Field Effect Transistor) as a base.

[0059] The polarity (the polarity of the voltage applied during the write / erase / read operation or the polarity of the carriers) in this embodiment and the next embodiment is used to describe MISFET operation in the case of memory cells. In the case of a memory cell having a p-channel MISFET as an underlying MISFET, in principle, the same operation can be achieved by reversing all polarities of applied potential, conductivity type of carriers, and the like. In the present application, the description will be made while distinguishing t...

no. 2 example

[0290] This embodiment and the above-mentioned reference Figure 1 to Figure 18 The described embodiments are different. In this embodiment, the gate electrode of the high breakdown voltage MISFET in the peripheral circuit area is composed of a silicide layer, and at this time the gate electrode has a control gate electrode and a memory gate electrode in the memory cell area equal to The height of each of them is lower than the height of the metal gate electrode constituting the low breakdown voltage MISFET in the peripheral circuit region. Figure 35 to Figure 39 are cross-sectional views of the semiconductor device of this embodiment during its respective manufacturing steps. and Figure 3 to Figure 18 resemblance, Figure 35 to Figure 39 A memory cell area 1A and a peripheral circuit area 1B are shown.

[0291] In the manufacturing steps of the semiconductor device of the present embodiment, firstly, performing and referring to Figure 3 to Figure 12 Similar steps to t...

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Abstract

To provide a semiconductor device having a memory cell equipped with a control gate electrode and a memory gate electrode adjacent to each other via a charge storage layer and having improved performance. In a semiconductor device having a MISFET including a gate electrode which is a metal gate electrode formed by a so-called gate last process, a control gate electrode and a memory gate electrode which include a memory cell of a split-gate type MONOS memory are formed by fully siliciding a silicon film.

Description

[0001] Cross References to Related Applications [0002] The disclosure of Japanese Patent Application No. 2014-174823 filed on August 29, 2014, including specification, drawings and abstract, is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device and a method of manufacturing the same, and the method can be used, for example, in the manufacture of a semiconductor device with a nonvolatile memory. Background technique [0004] As an electrically writable / erasable nonvolatile semiconductor memory device, EEPROM (Electrically Erasable Programmable Read Only Memory) has been widely used. Such a widely used memory device represented by a flash memory has a conductive floating gate electrode or a trap insulating film surrounded by an oxide film under the gate electrode of its MISFET. The charge stored in the floating gate electrode or the trap insulating film as memory information is read out as the ...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L29/78H01L29/423H01L21/28H01L21/336H01L21/8247
CPCH01L29/66545H01L29/4975H01L29/518H10B43/40H01L29/517
Inventor 天羽生淳
Owner RENESAS ELECTRONICS CORP
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