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Film-forming apparatus and film-forming method

A film-forming device and film-forming chamber technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of not getting ITO film, etc., and achieve uniform film-forming atmosphere and stable film quality. Maintenance, the effect of small variation in characteristics

Active Publication Date: 2011-11-16
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem that an ITO film having desired characteristics cannot be obtained

Method used

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  • Film-forming apparatus and film-forming method
  • Film-forming apparatus and film-forming method
  • Film-forming apparatus and film-forming method

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0078] figure 1 It is a schematic diagram of the in-line reactive sputtering apparatus of the first embodiment of the present invention.

[0079] The sputtering apparatus 1 is composed of a front chamber 2, a sputtering film forming chamber 3, and a rear chamber 4 that also serves as a reversal chamber. The sputtering film formation chamber 3 is composed of three areas of an inlet side area 5, a sputtering area 6 and an outlet side area 7. The center positions in the width direction of these entrance-side regions 5, sputtering regions 6, and exit-side regions 7 are provided for dividing these regions into forward paths ( figure 1 Middle and lower side) and loop ( figure 1 Upper middle side) Spacer 8 of two systems.

[0080] In addition, in the sputtering device 1, in the case of a loop, the front chamber 2 functions as a back chamber, and the rear chamber 4 functions as an front chamber. Here, for convenience, the forward path is referred to as the front chamber 2 and Back room 4....

no. 2 approach

[0123] Figure 8 It is a schematic diagram of the in-line reactive sputtering apparatus of the second embodiment of the present invention. The difference between the sputtering device 31 of this embodiment and the sputtering device 1 of the first embodiment is as follows. That is, in the sputtering apparatus 1 of the first embodiment, the carrier 12 is transported back and forth, and vacuum pumps 11 are provided on both sides of the inlet side area 5 and the outlet side area 7 of the sputtering film forming chamber 3. A gas introduction pipe 18 for film quality adjustment is provided in the center of the area 6. In contrast, in the sputtering apparatus 31 of this embodiment, the carrier 12 is transported in only one direction, and the sputtering film forming chamber 32 is provided on each side of the inlet side area 5 and the outlet side area 7 In the vacuum pump 11, a gas introduction pipe 18 for film quality adjustment is provided in the vicinity of the wall surface peripher...

no. 3 approach

[0126] Picture 9 It is a schematic diagram of the in-line reactive sputtering apparatus of the third embodiment of the present invention. The difference between the sputtering device 41 of this embodiment and the sputtering device 31 of the second embodiment is as follows. That is, in the sputtering device 31 of the second embodiment, the vacuum pump 11 is provided on each side of the inlet side area 5 and the outlet side area 7, and the wall surface of the side facing the vacuum pump 11 in the sputtering area 33 A gas introduction pipe 18 for film quality adjustment is provided near the end. In contrast, in the sputtering device 41 of this embodiment, a vacuum pump 11 is provided on each side of the inlet side area 5 and the outlet side area 7 of the sputtering film forming chamber 42, and the vacuum pump 11 is installed in the sputtering area 43. 11 is provided with a gas inlet pipe 18 for film quality adjustment at the center of the wall surface on the side facing each oth...

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Abstract

Disclosed is an apparatus for forming a compound thin film on the surface of a substrate, which is held in a sputtering film formation chamber, by reactive sputtering. The sputtering film formation chamber is provided with a first film property-adjusting gas introducing means for introducing a film property-adjusting gas, which is used for adjusting the film properties of a compound thin film to be formed on the front surface of the substrate, onto the back surface of the substrate.

Description

Technical field [0001] The present invention relates to a film forming device and a film forming method. More specifically, it relates to a film forming apparatus and a film forming method that can be used appropriately when forming a compound thin film such as a transparent conductive film on the surface of a substrate by a reactive sputtering method, and can form a compound thin film with excellent in-plane uniformity of film quality . [0002] This application claims priority based on Japanese Patent Application No. 2007-050646 filed in Japan on February 28, 2007, and the content is incorporated herein. Background technique [0003] At present, in liquid crystal displays (LCD), plasma displays (PDP), etc., in order to continuously form thin films such as transparent electrodes, dielectric films, and insulating films on many large-area glass substrates with uniform film thickness, various sputtering methods have been proposed. Device. [0004] One of them is a linear sputtering ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/56C23C14/0063C23C14/34
Inventor 中村肇有马央恭今村俊一齐藤一也
Owner ULVAC INC
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