Field effect transistor, method for manufacturing the same and electronic device using the field effect transistor
A technology for field effect transistors and electronic equipment, applied in transistors, semiconductor/solid-state device manufacturing, nanotechnology for information processing, etc., can solve problems such as large deviations in threshold voltage characteristics, large deviations, and insufficient electrical contact with nanowires , to achieve the effect of small characteristic deviation, light weight and easy manufacture
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Embodiment approach 1
[0036] Next, examples of the FET of the present invention will be described. 1A to 1D are cross-sectional views schematically showing representative examples of the FET of the present invention. As shown in FIGS. 1A to 1D , there are various structures of the FET of the present invention. FETs 100 a to 100 d in FIGS. 1A to 1D include a substrate 11 , a gate electrode 12 , a gate insulating layer 13 , a semiconductor layer 14 , a source electrode 15 , and a drain electrode 16 . Part of the semiconductor layer 14 functions as a channel region. The source electrode 15 and the drain electrode 16 are usually in direct contact with the semiconductor layer 14 , but a layer for reducing connection resistance or the like may be disposed at the boundary between the two.
[0037]The gate electrode 12 usually faces the semiconductor layer 14 via the gate insulating layer 13 . The gate electrode 12 is an electrode that applies an electric field to at least the channel region, that is, t...
Embodiment approach 2
[0086] In Embodiment 2, an active matrix display, a wireless ID tag, and a portable device will be described by taking an electronic device including the FET of the present invention described in Embodiment 1 as an example.
[0087] As an example of an active matrix display, a display using organic EL as a display portion will be described. Fig. 6 is a partially exploded perspective view schematically showing the structure of the display.
[0088] The display shown in FIG. 6 includes drive circuits 150 arranged in an array on a plastic substrate 151 . The driving circuit 150 includes the FET of the present invention and is connected to the pixel electrode. An organic EL layer 152 , a transparent electrode 153 , and a protective film 154 are arranged on the drive circuit 150 . The organic EL layer 152 has a structure in which a plurality of layers such as an electron transport layer, a light emitting layer, and a hole transport layer are stacked. The source electrode line 15...
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