Semiconductor laser

A technology of lasers and semiconductors, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of high threshold current and unsatisfactory problems, and achieve the effect of suppressing backhaul optical noise

Inactive Publication Date: 2006-05-03
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This phenomenon that the threshold current becomes high is remarkable at high temperature, and in FP-LDs used in a wide temperature range, the reduction of R f R r is not ideal

Method used

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  • Semiconductor laser
  • Semiconductor laser
  • Semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] figure 1 It is a cross-sectional view showing a schematic structure of the semiconductor laser according to Embodiment 1 of the present invention.

[0024] In the figure, 1 represents a p-type InP substrate, 2 represents an active layer composed of InGaAsP, and 3 represents a cladding layer composed of n-type InP. Here, one layer is used to represent the active layer 2, but the active layer 2 may be multiple quantum wells. In addition, beam binding layers for adjusting the boundary distribution of light may be provided above and below the active layer 2 . In this example, the conductivity type of the substrate 1 is p-type, but the polarity can also be reversed, and a structure in which an active layer and a p-type InP cladding layer are arranged on an n-type InP substrate can be adopted. SiO 2 , Si, Al 2 o 3 A multilayer high reflection film 4 having a reflectance of about 90% is formed, and a laminated film composed of a first dielectric film 5 and a second diele...

Embodiment 2

[0038] image 3 It is a cross-sectional view showing a schematic structure of a semiconductor laser according to Embodiment 2 of the present invention.

[0039] In the figure, 11 denotes a p-type InP substrate, 12 denotes an active layer made of InGaAsP, and 13 denotes a cladding layer made of n-type InP. The structure of the reflective film 14 formed on the rear end face is the same multilayer high reflective film as in the first embodiment described above. A laminated film of various dielectric materials consisting of a first dielectric film 15 , a second dielectric film 16 , and a third dielectric film 17 is formed on the front end surface to be the laser light emitting surface. As an example of the structure of this laminated film, the first dielectric film 15 is made of SiO with a thickness of λ / 4 (λ represents the wavelength in the medium of the LD oscillation light). 2 film, the second dielectric film 16 adopts Al with a thickness of λ / 4 2 o 3 film, the third dielec...

Embodiment 3

[0045] Figure 5 It is a cross-sectional view showing a schematic structure of a semiconductor laser according to Embodiment 3 of the present invention.

[0046] In the figure, 21 represents a p-type InP substrate, 22 represents an active layer composed of InGaAsP, 23 represents a cladding layer composed of n-type InP, and 24 represents a diffraction grating composed of n-type InGaAsP disposed in the laser resonator. The structure of the rear end face reflective film 25 is the same multi-layer high reflective film as in the first embodiment described above. A first dielectric film 26 and a second dielectric film 27 are formed on the front end surface. The material and thickness of the dielectric film are the same as in Example 1 above.

[0047] As described above, according to the third embodiment, a multilayer film composed of various dielectric materials described in the first or second embodiment is formed on the laser emission surface of the DFB-LD having a diffraction g...

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Abstract

The present invention provides a semiconductor laser such as a Fabry-Perot type laser diode with small characteristic deviation and high slope efficiency or a distributed feedback type laser diode capable of suppressing backhaul optical noise. In a semiconductor laser in which a dielectric film is formed on at least one laser emission surface, as the dielectric film, the wavelength dependence of the reflectivity on the emission surface becomes maximum or minimum near the oscillation wavelength of the laser, and the oscillation wavelength of the laser is at the emission wavelength. A multi-layered film of various dielectric materials whose surface reflectance is set to be 10% or more and 25% or less.

Description

technical field [0001] The present invention relates to a semiconductor laser having a dielectric laminated film formed on a laser light emitting end face. Background technique [0002] A Fabry-Perot laser diode (Fabry-Perot Laser Diode: hereinafter referred to as FP-LD) generates laser oscillation by reciprocating and resonating light between a pair of reflective surfaces. The reflective surface is usually formed by cleavage crystals, and the reflectivity of an end face (front end face) cleaved by the laser exit surface is R f , The reflectivity of the other end face (rear end face) is R r , it is generally designed as R f < R r . With such a structure, more laser light can be extracted from the front end surface, and thus there is an advantage that the slope efficiency which is an important characteristic of a laser diode (hereinafter referred to as LD) can be improved. [0003] On the other hand, the reflectivity of the end face also affects another important char...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028H01S5/10
CPCH01S5/10
Inventor 奥贯雄一郎松冈裕益
Owner MITSUBISHI ELECTRIC CORP
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