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Gallium nitride HEMT tube integrated circuit, flyback circuit, bridgeless PFC circuit and laser radar

An integrated circuit and lidar technology, which is applied in the components, electrical components, and electrical pulse generation of electric pulse circuits. MOSFET and other issues

Pending Publication Date: 2020-01-03
INNOSCIENCE (ZHUHAI) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with MOSFETs, GaN HEMTs have poor reverse freewheeling capability and poor avalanche performance, and cannot completely replace MOSFETs in some application scenarios.

Method used

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  • Gallium nitride HEMT tube integrated circuit, flyback circuit, bridgeless PFC circuit and laser radar
  • Gallium nitride HEMT tube integrated circuit, flyback circuit, bridgeless PFC circuit and laser radar
  • Gallium nitride HEMT tube integrated circuit, flyback circuit, bridgeless PFC circuit and laser radar

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Embodiment Construction

[0031] In order to facilitate the understanding of the present invention, the following will describe the present invention more fully. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention.

[0033] In one of the examples, as figure 1 As shown, a gallium nitride HEMT tube integrated circuit is provided, including: a first gallium nitride HEMT tube N1 packaged in a tube shell 110, a reverse ...

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Abstract

The invention relates to a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar. The gallium nitride HEMT tube integrated circuit comprises a first gallium nitride HEMT tube packaged in a tube shell, a reverse follow current unit and a discharge unit; the input end of the reverse freewheeling unit is connected with the source electrode of thefirst gallium nitride HEMT tube, and the output end of the reverse freewheeling unit is connected with the drain electrode of the first gallium nitride HEMT tube and used for forming a reverse freewheeling loop with the first gallium nitride HEMT tube; and the input end of the discharge unit is connected with the drain electrode of the first gallium nitride HEMT tube, and the output end of the discharge unit is used for grounding and carrying out current discharge on the first gallium nitride HEMT tube. A reverse follow current unit is configured for a first gallium nitride HEMT tube of a maintube core; the gallium nitride HEMT tube integrated circuit is enabled to have good reverse follow current capability; and the discharge unit is configured to discharge current for the first galliumnitride HEMT, so that the avalanche tolerance is improved, the tolerance range of the first gallium nitride HEMT of the main tube core is expanded, MOSFETs can be replaced in more scenes, and the performance better than that of the MOSFETs is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar. Background technique [0002] With the technological iteration of technology products, whether it is consumer electronics, communication hardware, electric vehicles or household appliances, how to improve power conversion energy efficiency, increase power density levels, prolong battery life and speed up switching speeds must be considered. Based on the improvement of these problems, the electronics industry will become more and more dependent on a new type of power semiconductor - Gallium Nitride (GaN) HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor). [0003] Compared with MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field-Effect Transistor), Gallium Nitride HEMT tube can switch faster. However,...

Claims

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Application Information

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IPC IPC(8): H03K3/353H03K3/01G01S7/484G01S7/282
CPCH03K3/353H03K3/01G01S7/282G01S7/484
Inventor 何川赵起越
Owner INNOSCIENCE (ZHUHAI) TECH CO LTD
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