30results about How to "Expand the side area" patented technology

A structure of the front section of a vehicle body is disposed on the front end portion of a front side frame on the same position as the rear surface of a side stay in the front-rear direction of the vehicle body, and includes a first extending portion extending downward along the rear surface of the side stay. A lower stay is provided with a second extending portion extending outward in the vehicle width direction beyond the side stay to a position below the first extending portion. A joining section is formed so as to join the front surface of the first extending portion, the upper surface of the second extending portion, and outside surface of the side stay. The joining section defines an arrangement region for inner and outer shock absorbing members having a lower rigidity than the front side frame.

A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first metal layer, a connection layer on the portion of the first metal layer, the sidewall of the opening and a portion of the etching stop layer, a second metal layer over the connection layer, and an insulating layer between the second metal layer and the connection layer.

The present application discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a semiconductor substrate, a gate stack and a second protection layer in sequence on a first insulating layer; after defining a gate region and removing portions of the second protection layer and the gate stack outside the gate region, while keeping portions of the stop layer, the semiconductor layer and the second insulating layer which covers sidewalls of the patterned semiconductor layer outside the gate region and exposing the sacrificial layer, performing source / drain ion implementation in the semiconductor layer; after forming a second sidewall spacer so as to cover at least the exposed portion of the sacrificial layer, removing the first protection layer and the second protection layer so as to expose the semiconductor layer and the gate stack; and forming a contact layer on the exposed portion of the semiconductor layer and the gate stack; performing planarization so as to expose the first protection layer, and then removing the first protection layer, the sacrificial layer, the stop layer and the semiconductor layer with the first sidewall spacer and the second sidewall spacer as a mask, so as to form a cavity which exposes the first insulating layer. It facilitates reduction of short channel effects, resistance of source / drain regions, and parasite capacitance.

The invention discloses a complementary metal oxide semiconductor anti-latch structure which is composed of an N-type latch protection layers and a P-type latch protection layer. The N-type latch protection layer is composed of one or more of an N-type deep well, an N-type buried layer, an N well and an N-type diffusion region. The P-type latch protection layer is composed of one or more of a P-type deep well, a P-type buried layer, a P well and a P-type diffusion region. The N-type latch protection layer and the P-type latch protection layer are arranged into multiple groups and are cross-shaped. Compared with the exiting complementary metal oxide semiconductor anti-latch structure, the electrostatic protection turn-on voltage can be reduced, and the current discharge capability can be improved.