3results about How to "Improve process capability" patented technology

A semiconductor processing device and its base support assembly include a central support pillar and at least three edge support pillars. The central support pillar coincides with the central axis of the base, limiting base eccentricity after heating and solving the eccentricity problem caused by the different linear expansion of the support pillar and the base. By reducing the cross-sectional area of ​​the central support pillar, the influence of light refraction and reflection on the thermal radiation optical path of the base is reduced. By reducing the contact area between the support pillar and the base, temperature conduction is reduced, thereby improving temperature uniformity. Each support pillar includes an upper pillar and a lower pillar made of different materials. The light absorption rate of the upper pillar is the same as or similar to that of the base, making the temperature difference between the upper pillar and the base approach zero, ensuring good temperature uniformity of the base. The upper pillar has extremely low thermal conductivity, which can block heat conduction from the upper pillar to the lower pillar, reducing heat loss, ensuring heat balance of the base, and improving the temperature distribution uniformity of the substrate.

The application provides a semiconductor device manufacturing method, an etching control method, a system and a storage medium. The semiconductor device comprises a substrate and a semiconductor structure on the substrate. The semiconductor device manufacturing method comprises: performing first etching on the semiconductor device to form a first opening on the semiconductor device; obtaining parameter changes of the first etching during the formation of the first opening and forming a data record; determining etching process parameters of second etching according to the data record and a preset data record; and performing second etching on the semiconductor device according to the etching process parameters of the second etching and the first opening to form a second opening comprising the first opening in the semiconductor device. The etching process parameters of the second etching are determined according to the data record and the preset data record, so that the process size of the formed second opening is stable, and the yield and process capability of the device are improved.

The utility model discloses a lockset reshaping jig which comprises an upper die base, a lower die base, a lockset and reshaping blocks, a reshaping cavity is formed in the top of a lower die, a plurality of reshaping blocks are arranged in the reshaping cavity, the lockset is located in the reshaping cavity and located between the reshaping blocks on the two sides, and the lockset is formed through powder metallurgy injection molding. The production efficiency is improved, the precision is improved, the cost is reduced (traditional die-casting and stamping processes are replaced), the processing capability of the product is improved, the next process can be carried out only when the size, the appearance and the surface roughness can meet the requirements, and the yield of the product is improved.