Image sensor construction and method for making the same

Abstract

The invention provides a method to make an image sensor. Firstly, a substrate comprising a plurality of secondary pixels is provided, and a conducting layer and a photoconductive layer are sequentially arranged on the substrate; then the conducting layer and the photoconductive layer are respectively patterned; a pixel electrode and a photoreceptor are respectively developed in each secondary pixel, and the pixel electrodes and the photoreceptor of two neighboring secondary pixels are not connected; a patterned dielectric layer is developed on the surface of the substrate and the photoreceptors of the secondary pixels are exposed; a transparent conducting layer is developed on the surface of the substrate and is arranged on the photoreceptors in the secondary pixels.

Description

technical field [0001] The invention provides a manufacturing method of an image sensor, especially a manufacturing method of an image sensor capable of reducing carrier crosstalk. Background technique [0002] Image sensors such as complementary metal oxide semiconductors (CMOS) or charge coupled devices (CCD) are silicon semiconductor devices that capture photons and convert them into electrons, which are transported and converted again It is a voltage that can be measured to obtain digital data. At present, the industry has developed a photoconductor-on-active-pixel (POAP) image sensor, whose structure is based on hydrogenated amorphous silicon (α-Si:H) as the photosensitive element. And stacked on CCD or CMOS elements. The sensing result of this photoconductor covered active pixel image sensor is better than that of traditional CCD or CMOS image sensor. Due to the special stacked structure of the photoconductor-covered active pixel image sensor, it has the advantage o...

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