Diameter control method for czochralski crystal growing

A technology of crystal growth and control method, which is applied in the field of crystal pulling speed or temperature control value and crystal diameter control, which can solve the problems of increasing furnace height and complex equipment structure.

Inactive Publication Date: 2009-12-02
无锡市惠德晶体控制设备有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The potential problems brought about are complex equipment structure and increased furnace height

Method used

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  • Diameter control method for czochralski crystal growing
  • Diameter control method for czochralski crystal growing
  • Diameter control method for czochralski crystal growing

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Embodiment Construction

[0021] The specific implementation manner of the present invention will be further described below in conjunction with the accompanying drawings and through comparison with existing methods.

[0022] figure 1 It is a method in the prior art (patent application number: 200810155377.9) to realize equal-diameter control of crystal growth through weighing method combined with variable pulling speed control technology. The steps of the method are as follows:

[0023] (1) First, under a suitable temperature field, heat and melt the raw materials that need to grow crystals.

[0024] (2) At a suitable temperature, slowly bring the seed crystal into contact with the center of the liquid surface. The seed crystal is installed at the bottom of the seed crystal rod. The upper part of the seed rod is connected with the load cell. The computer begins to collect the weight signal of the sensor periodically.

[0025] (3) The seed crystal is continuously and slowly pulled up, and under the...

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PUM

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Abstract

The invention discloses a diameter control method for czochralski crystal growing, which comprises the following steps: acquiring crystal diameter signals in an imaging or weighing mode at different stages of the growth of crystals; comparing a crystal diameter feedback signal with a crystal diameter preset value to acquire a signal error; and acquiring a crystal mechanical pulling speed control value or a temperature control value through the PID calculation of the signal error. The method reads a diameter signal by using an imaging method, is high in precision, small in visual field, and avoids crucible rise in a seeding stage, as well as acquires diameter signals by a weighing method, avoids crucible rise and is free from visual field limitation and stable in signal in the following shoulder extension, diameter control and closing stages.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor single crystal by a pulling method, in particular to obtaining the current diameter signal of the crystal as a feedback signal in different ways in different stages of the crystal growth process, and comparing it with the diameter setting signal to obtain the crystal pulling speed or The temperature control value, thus the method of controlling the diameter of the crystal. Background technique [0002] The pulling method crystal growth method (Czochralski Method, Czochralski Method) is one of the main methods to obtain single crystals, such as silicon single crystals, laser crystals, and nonlinear optical crystals. Its working principle is that the raw material is first melted, and then the seed crystal (usually a single crystal) is brought into contact with the liquid level of the melt from above at a suitable temperature, and then the seed crystal is slowly pulled up. While ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/22
Inventor 惠梦君
Owner 无锡市惠德晶体控制设备有限公司
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