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Magnetic tunnel junction device, electronic system, and storage system, and manufacturing method thereof

A magnetic tunnel junction and device technology, applied in the manufacture/processing of electromagnetic devices, inductance/transformer/magnet manufacturing, information storage, etc., can solve problems such as difficult to provide thermally stable MTJ

Active Publication Date: 2016-05-25
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the pattern size decreases, it becomes more difficult to provide a thermally stable MTJ

Method used

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  • Magnetic tunnel junction device, electronic system, and storage system, and manufacturing method thereof
  • Magnetic tunnel junction device, electronic system, and storage system, and manufacturing method thereof
  • Magnetic tunnel junction device, electronic system, and storage system, and manufacturing method thereof

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Embodiment approach

[0149] In some example implementations, such as Figure 32 As shown, at this time, the magnetic layer MGL, the first capping layer CL1 and the second capping layer CL2 may remain in a state substantially free of oxygen. Simultaneously, the wafer may be exposed to an external atmosphere containing oxygen atoms during the transfer and / or waiting steps performed outside the deposition chamber. Therefore, the uppermost layer on the wafer may have a certain oxygen content (hereinafter, natural oxygen content) originating from the diffusion of oxygen atoms. According to example embodiments of the inventive concepts, at present, the magnetic layer MGL, the first capping layer CL1 and the second capping layer CL2 may have an oxygen content less than or equal to a natural oxygen content.

[0150] Oxygen treatment may be performed on the second capping layer CL2 (at S40). The oxygen treatment S40 may be performed to oxidize at least a portion of the exposed surface of the second cappi...

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Abstract

The invention provides a magnetic tunnel junction device, which comprises: a fixed magnetic structure; a free magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, the fixed magnetic structure and the free magnetic structure. At least one of the magnetic structures includes a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

Description

technical field [0001] Embodiments of the inventive concept generally relate to semiconductor memory devices. For example, embodiments of the inventive concepts relate to semiconductor memory devices including magnetic tunnel junction (MTJ) devices, memories, electronic systems, and memory systems, and methods of manufacturing the same. Background technique [0002] As the use of portable computers and wireless communication devices increases, storage devices require higher density, lower power, and / or non-volatile characteristics. Magnetic storage devices can meet the above technical requirements. [0003] One example data storage mechanism for magnetic memory devices is the tunneling magnetoresistance (TMR) effect of MTJs. For example, magnetic memory devices having MTJs have been developed such that the MTJs may have a TMR ratio of several hundred to several thousand percent. However, as the pattern size decreases, it becomes more difficult to provide a thermally stabl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12H01L27/22G11C11/15
CPCH01F10/3254H01F10/3286H01F41/303G01R33/098B82Y40/00H01F10/123G11C11/161G11C11/1659H10B61/20H10B61/10H10B61/22H10N50/85H10N50/01H10N50/10
Inventor 朴正宪吴世忠金佑填朴相奂李将银林佑昶
Owner SAMSUNG ELECTRONICS CO LTD
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