Data storage method and device

A data storage and data technology, which is applied in memory system, electrical digital data processing, memory address/allocation/relocation, etc., can solve the problems of space occupation, increase of production cost of NandFlash storage device, etc., so as to save production cost and cache effect of space

Active Publication Date: 2014-07-30
合肥致存微电子有限责任公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In the above-mentioned NandFlash storage device data writing method, when there is a large number of pages of data writing, more record block mapping tables are needed to store the mapping relationship of the data to be written, which will greatly occupy the space of the NandFlash storage device cache , in order to improve the performance of the NandFlash storage device, more buffer space needs to be provided, which will lead to an increase in the production cost of the NandFlash storage device

Method used

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no. 1 example

[0070] Based on the above-mentioned first embodiment, the method also includes the steps of:

[0071] Step S13, when the data writing instruction is detected and received, analyze whether there is data continuous with the data to be written;

[0072] Step S14, when the data continuous with the data to be written is stored, obtain the page number of the data to be written according to the received data write command, and update the page number continuous with the data to be written according to the obtained page number A map entry for the data.

[0073] Refer to Table 6, the logical page address corresponding to the data to be written is 0x00000005, single logical page data is one page of data, refer to Table 2, it is the mapping table of the saved data, and exists in the mapping table of the saved data The logical page address is 0x00000004, which is analyzed to obtain data that is continuous with the data to be written. According to the received data write command, the numbe...

no. 2 example

[0083] Based on the first and second embodiments above, the method also includes the steps of:

[0084] Step S15, when the data write command is detected and received, determine the logical page address of the data to be written according to the received data write command, and determine the corresponding logical page address for each logical page address of the data to be written physical page address, and analyze whether there is data consistent with the logical page address of the data to be written;

[0085] Step S16, when the data consistent with the logical page address of the data to be written is stored, find out the mapping item corresponding to the data consistent with the logical page address of the data to be written, and update and find out according to the determined physical page address mapping item.

[0086] Referring to Table 6, the logical page address corresponding to the data to be written is 0x00000005, and the determined physical page address is 0x00001...

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Abstract

The invention discloses a data storage method. The data storage method comprises the steps that when a data writing instruction is detected and received, logic page addresses of data to be written and a number of pages of the data to be written are determined according to the received data writing instruction, a physical page address corresponding to each logic page address of the data to be written is determined, and the data to be written comprise multi-logic page data and signal-logic page data; the determined logic page addresses, the physical page addresses and the number of pages are taken as a mapping entry and stored a record block mapping table in a relevance way. The invention also discloses a data storage device. A mapping entry is effectively prevented from being created for each page of storage data, a buffer memory space is saved, and the manufacturing cost of a Nand Flash storage device is thus saved.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a data storage method and device. Background technique [0002] NandFlash (flash memory), a storage medium, consists of multiple physical blocks, and each physical block includes multiple physical pages. Data is written in units of pages. Physical pages that have written data cannot be rewritten. After the written data is erased, the data can be written again, and the erasing of the written data is performed in units of blocks. In the NandFlash storage device, a physical block full of data is called a data block, and a physical block in use is a record block, and in order to improve performance, there are usually multiple record blocks. The NandFlash storage device includes an FTL (Flash Translation Layer, flash translation layer) module, which is used to convert between logical page addresses and physical page addresses, and drive hardware to transmit data. The NandFlash ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/08G06F3/06G06F12/0866
Inventor 陈强吴大畏陈寄福
Owner 合肥致存微电子有限责任公司
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