Z-axis structure of accelerometer and production method thereof

A technology of accelerometer and production method, applied in the direction of measuring acceleration, speed/acceleration/shock measurement, instrument, etc., to achieve the effect of reducing contact area and zero drift

Active Publication Date: 2017-12-29
GOERTEK MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for accelerometers with this structure, the zero point offset caused by external stress and temperature changes is unavoidable.

Method used

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  • Z-axis structure of accelerometer and production method thereof
  • Z-axis structure of accelerometer and production method thereof
  • Z-axis structure of accelerometer and production method thereof

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Embodiment Construction

[0029] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0030] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0031] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0032] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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PUM

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Abstract

The invention discloses a Z-axis structure of an accelerometer and a production method thereof, comprising a substrate, a fixed electrode, and a mass block, a first anchor point is arranged on the surface of the substrate, and the fixed electrode passes through its end Connected to the first anchor point, the fixed electrode is suspended on the substrate through the first anchor point; an intermediate anchor point is also arranged on the surface of the substrate, and the mass block is suspended on the substrate through the intermediate anchor point Above the fixed electrodes, a plurality of through holes are arranged on the mass block and the fixed electrodes. In the Z-axis structure of the present invention, the fixed electrode is connected to the substrate through the first anchor point, so that there is a certain gap between the fixed electrode and the substrate, which cuts off the deformation transmission channel from the substrate to the fixed electrode, reducing the The contact area between the electrode and the substrate can effectively prevent the deformation of the substrate caused by external stress and temperature changes from being transmitted to the fixed electrode, greatly reducing the zero point drift of the Z-axis structure.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical (MEMS), more precisely, relates to a micro-electro-mechanical accelerometer, in particular to a Z-axis structure in the accelerometer; the invention also relates to a production method of the Z-axis structure. Background technique [0002] The previous Z-axis accelerometers are all flat capacitive, and the movement mode of the mass block is a structure similar to a seesaw. refer to figure 1 , on the substrate 1 below the mass 3, there are two fixed electrodes 2 made of metal, and the fixed electrodes 2 are attached to the surface of the substrate 1. The proof mass 3 and the two fixed electrodes 2 form two capacitors C1 and C2 respectively. Wherein, the mass block 3 is supported above the substrate through the anchor point 4 . [0003] The Z-axis structure of this structure is relatively sensitive to deformation caused by external stress and temperature changes. The deformation caused by...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/125
Inventor 郑国光
Owner GOERTEK MICROELECTRONICS CO LTD
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