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47results about How to "Small zero drift" patented technology

Double-frequency laser raster interference measuring method and measuring system thereof

The invention provides a double-frequency laser raster interference measuring method and a measuring system thereof. The method comprises the following steps: utilizing a double-frequency laser to output double-frequency laser, converting a direct current signal system of common raster interference measurement into an alternating current signal system, allowing the double-frequency laser to go through a spectroscope to form a reference optical path and a measuring optical path, through motion of a raster, allowing beat frequency of measuring optical path optical beat interference fields to change, and finally using a digital phase measuring method to carry out high multiple electrical subdivision on a high multiple optical subdivision signal obtained by each optical beat interference field to complete measurement. The measuring system comprises the double-frequency laser and the first spectroscope, reflected and transmitted light beam go through the first spectroscope and form the reference optical path and the measuring optical path respectively, the reference optical path is provided with a polarization analyzer and a photoelectric detector, the measuring optical path is provided with a raster diffraction interference system, and an output optical path of the raster diffraction interference system is provided with a photoelectric detector. The method and the system have the advantages of strong anti-interference capability, good stability, convenient usage, high measuring precision and the like.
Owner:NAT UNIV OF DEFENSE TECH

0-100Pa monolithic silicon based SOI high-temperature low drift micropressure sensor and processing method thereof

The invention relates to a super-low micro-pressure sensor of 0-100pa single-chip silicon based SOI, which has the advantages of comparatively high sensitivity and linearity, high-temperature resistance, simple technique, good consistency, low production cost and being suitable for mass production. Therefore, the invention also provides a method for processing the sensor. The chips includes an N-shaped or P-shaped silicon substrate (1), two sides of which are covered with an insulation layer (2), a polysilicon layer (3) is deposited on the surface of the insulation layer (2); the surface of the polysilicon layer is a silicon dioxide layer (4), the surface of which is a polysilicon film layer which can generate polysilicon piezo-resistance (5); polysilicon inner lead (6) doped with dense boron is connected with the resistance (5); the surface of the polysilicon internal lead (6) is covered with aluminum lead (7); the back of the chip is provided with a square-shaped opening (10); polysilicon is taken as the substrate (1), which then goes through the processes of photoetching, depositing, injecting by adopting an ion beam machine, annealing, feeding dry oxygen-wet oxygen-dry oxygen, photoetching, TMAH wet etching or RIE dry etching, photoetching, dense-boron dispreading, front steaming and plating aluminm film, leading-out weld feet and wet-etching, etc.
Owner:淮安纳微传感器有限公司

Oil-gas pipeline vibration monitoring method and device based on vibration wire type sensor

The invention relates to an oil-gas pipeline vibration monitoring method and device based on a vibration wire type sensor. According to the method, the parameters of amplitude and acceleration of a pipeline are converted into axial strain through stress on a metal bar (10) and further into the output frequency signals of the vibration wire type strain sensor (12), and by measuring the frequency change signals, measurement of the vibration acceleration of the oil-gas pipeline can be achieved; after fast Fourier transform (FFT) is performed on the vibration acceleration a (t), the vibration spectrum of the pipeline can be obtained and further the vibration period can be obtained; according to the number of waves within a quarter of the vibration period, the amplitude and the frequency in a measuring point can be obtained, and further the amplitude-time-history curve of vortex induced vibration of the pipeline can be drawn up. According to the oil-gas pipeline vibration monitoring method and device based on the vibration wire type sensor, the vibration frequency acceleration of the pipeline is converted into the strain of the vibration wire sensor, so that high-precision, anti-interference and stable-performance automatic monitoring of the vibration frequency of the oil-gas pipeline can be achieved.
Owner:PIPECHINA SOUTH CHINA CO

0-50pa single slice silicon based SOI ultra-low micro pressure sensor and its processing method

The invention relates to a single chip silicon substrate SOI sensor with ultra-low micropressure of between 0 and 50 pa. The sensor has high sensitivity and linearity, high temperature resistance and simple process and is suitable for large-scale production. Therefore, the invention also provides a method for processing the sensor. A chip comprises a silicon underlayer (1); insulating layers (2) are covered on two surfaces of the silicon underlayer; a monocrystal silicon film with a thickness of 0.3 micron on the surface of the insulating layer (2) generates a resistor (3); an inner lead wire (4) is connected with the resistor (3); an opening of the back of the chip is provided with an island flap (7) or a flat film no island flap; and a composite elastic film (8) with silicon nitride and silicon dioxide is arranged between the island flap and a frame. Monocrystal silicon is used as the underlayer (1), then an opening (6) is carved on the back of the underlayer; oxygen ions are injected on the front of the silicon chip; the silicon chip is processed by anneal to form a silicon dioxide insulating layer and the monocrystal silicon film; an oxide layer and a P-type conducting layer are thermally grown on the front of the silicon chip, then a resistor area (3) and an inner lead heat pressing pin area (4) are formed on the front of the silicon chip; the monocrystal silicon film on the other areas of the front is eroded to expose the silicon dioxide layer; and the silicon nitride film deposited on the front and the back of the silicon chip and the silicon dioxide on the front are combined into a complementary composite insulating layer.
Owner:淮安纳微传感器有限公司

Stress monitoring device and manufacturing method

The invention provides a stress monitoring device. The stress monitoring device comprises a fiber bragg grating, an optical fiber and a strain body. A protective shell covering the sidewall is fixedly arranged on the sidewall of the strain body. A fiber outlet hole is formed in the protective shell. A protective baffle is arranged around the fiber outlet hole. In a layout space between the protective shell and the sidewall of the strain body, the first end of the optical fiber is fixed to the sidewall of the strain body, and the optical fiber is wound and fixed to the sidewall of the strain body according to a certain winding distance in the axial direction of the strain body. The fiber bragg grating is arranged on the optical fiber in the axial direction of the optical fiber. The second end of the optical fiber extends out of the protective shell through the fiber outlet hole and is connected with a wideband incident light source. A fiber bragg grating demodulation instrument is connected with the second end of the optical fiber through an optical coupler. The stress monitoring device can overcome the defects that an existing stress monitoring device is prone to electromagnetic interference, large in temperature excursion and poor in environmental adaptability. The invention further provides a manufacturing method.
Owner:8TH RES INST OF CETC

Current measuring method and device

The invention provides a current measuring method and a current measuring device, which relate to the field of electronic circuits. The current measuring method comprises the steps of: adjusting a first auxiliary current, so that the sum of intensity of a magnetic field generated by the first auxiliary current flowing through an auxiliary coil of an auxiliary current and intensity of a magnetic field generated by a current to be detected is a first magnetic field intensity; acquiring value of the first auxiliary current; switching on a second auxiliary current, wherein direction of magnetic field intensity generated by the second auxiliary current is opposite to direction of magnetic field intensity generated by the first auxiliary current; adjusting the second auxiliary current, so that the sum of intensity of a magnetic field generated by the secondary auxiliary current flowing through the auxiliary coil of the auxiliary current and intensity of the magnetic field generated by the current to be detected is a second magnetic field intensity, and the first magnetic field intensity and the second magnetic field intensity are identical in magnitude and opposite in direction; acquiring value of the second auxiliary current; and carrying out differential operation on the second auxiliary current and the first auxiliary current, and calculating the current to be detected according to a difference value between the second auxiliary current and the first auxiliary current as well as number of turns of the auxiliary coil. The current measuring method can improve the measurement accuracy.
Owner:SHENZHEN XINRUIDA ELECTRIC POWER EQUIP

Optical fiber hydrogen sensor based on Au@Pd nano particles and preparation method thereof, and application of optical fiber hydrogen sensor based on Au@Pd nano particles

ActiveCN110286090AIncrease contact areaShorten penetration-diffusion-equilibrium timeMaterial nanotechnologyNanosensorsHydrogen sensorHydrogen concentration
The invention relates to an optical fiber hydrogen sensor based on Au@Pd nano particles and a preparation method thereof, and application of an optical fiber hydrogen sensor based on Au@Pd nano particles. The optical fiber hydrogen sensor comprises a flexible substrate and an Au@Pd nano particle single-layer film, wherein the surface of the flexible substrate is printed with a nano grating structure, and the Au@Pd nano particle single-layer film coveres the surface of the nano grating structure. The preparation method comprises the following steps of: (1) converting Au@Pd nano-particles into hydrophobic water, and dropping the hydrophobic water onto the surface of ultrapure water, inserting the flexible substrate into the liquid surface; (2) gathering Au@Pd nano particles on one surface area of the flexible substrate printed with the nano grating structure to a mirror surface with metallic luster, separating from the liquid surface at a speed of 0.1 mm/s after 10s, performing evaporating, and removing the flexible substrate. When the optical fiber hydrogen sensor is used for hydrogen detection, the response speed is high, the stability is good, and the response speed can reach 3s when the hydrogen concentration of 0.1% is measured.
Owner:WUHAN UNIV OF TECH

Multi-mode coupling miniature electric field sensing device based on piezoelectric effect and piezoresistive effect

The invention discloses a multi-mode coupling miniature electric field sensing device based on a piezoelectric effect and a piezoresistive effect. The miniature electric field sensing device comprisesa horizontally placed semiconductor thin film, a horizontally placed substrate is arranged under the semiconductor thin film, a cavity structure is formed between the semiconductor thin film and thesubstrate through support of a middle interlayer, an upper surface of the semiconductor thin film is evenly provided with a piezoresistive material, the piezoresistive material comprises a transverse-transverse mode piezoelectric film and a transverse-longitudinal mode piezoelectric block, and in a transverse-transverse mode, a top surface of the semiconductor thin film is provided with the piezoelectric film; and in a transverse-longitudinal mode, a bottom surface of the semiconductor thin film is provided with the piezoelectric block. The multi-mode coupling miniature electric field sensingdevice based on the piezoelectric effect and the piezoresistive effect, provided by the invention, has the beneficial effects of being small in volume and highly integrated, effectively reducing circuit temperature drift, reducing zero drift, improving measurement accuracy, being capable of realizing electric field accurate measurement under wide band, high field intensity and complex environment,and also being capable of being mounted and maintained in the case of being electrified.
Owner:TSINGHUA UNIV

High-temperature solid ceramsite sand electric heating experiment device for supercritical carbon dioxide power generation

The invention discloses a high-temperature solid ceramsite sand electric heating experiment device for supercritical carbon dioxide power generation. A high-power frequency modulation impact power supply provides power to the high-temperature solid ceramsite sand electric heating experiment device. In the high-temperature solid ceramsite sand electric heating experiment device, a variable frequency motor is fixed above a first channel steel fixing support, and a ceramsite storage device is fixed below the first channel steel fixing support. A first knife switch is fixed on the ceramsite storage device, and the other end of the first knife switch is connected with a positive electrode. A shaft of the variable-frequency motor is connected with a stirrer. Nine heating pipes are arranged in parallel between a pair of electrodes connected with an output end of the high-power frequency modulation impact power supply; a thermocouple arranged on a heating pipe; and the heating pipe and the electrodes are connected through a high-voltage crimping process. The other surface of a positive electrode plate is connected with the first knife switch; and the other surface of a negative electrode plate is connected with a second knife switch. And a ceramsite sand recoverer is positioned below the heating pipes, an upper part is welded with the second knife switch, and a lower part is welded with a third knife switch.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI

Non-contact electrostatic intensity detection system

The invention discloses a non-contact electrostatic intensity detection system. The system comprises a single-chip microcomputer, an electromagnet driving module, an electromagnetic steering engine with an antenna, an amplifying circuit and a display module. The single-chip microcomputer is connected with the electromagnet driving module; the electromagnet driving module is connected with the electromagnetic steering engine with the antenna; the electromagnetic steering engine with the antenna is connected with the amplifying circuit; the display module is connected with the single-chip microcomputer. The single-chip microcomputer drives the electromagnetic steering engine with the antenna to swing up and down through the electromagnet driving module, an alternating-current sampling electrostatic field and inductive charges collected by the electromagnetic steering engine with the antenna are amplified through the amplifying circuit and then output to the single-chip microcomputer, andthe single-chip microcomputer calculates a relative electrostatic intensity value and outputs the relative electrostatic intensity value to the display module to be displayed. The antenna structure of the direct induction type electrostatic intensity detection system is improved, and zero drift is reduced; compared with a rotary vane type electrostatic detection system and a vibration capacitancetype electrostatic detection system, the structure of the induction antenna and the design of a conditioning circuit are greatly simplified, and the cost is reduced.
Owner:WUXI GISSING AUTO ACOUSTIC PARTS TECH CO LTD

Miniature Electric Field Sensing Device Based on Multimodal Coupling of Piezoelectric Effect and Piezoresistive Effect

The invention discloses a multi-mode coupling miniature electric field sensing device based on a piezoelectric effect and a piezoresistive effect. The miniature electric field sensing device comprisesa horizontally placed semiconductor thin film, a horizontally placed substrate is arranged under the semiconductor thin film, a cavity structure is formed between the semiconductor thin film and thesubstrate through support of a middle interlayer, an upper surface of the semiconductor thin film is evenly provided with a piezoresistive material, the piezoresistive material comprises a transverse-transverse mode piezoelectric film and a transverse-longitudinal mode piezoelectric block, and in a transverse-transverse mode, a top surface of the semiconductor thin film is provided with the piezoelectric film; and in a transverse-longitudinal mode, a bottom surface of the semiconductor thin film is provided with the piezoelectric block. The multi-mode coupling miniature electric field sensingdevice based on the piezoelectric effect and the piezoresistive effect, provided by the invention, has the beneficial effects of being small in volume and highly integrated, effectively reducing circuit temperature drift, reducing zero drift, improving measurement accuracy, being capable of realizing electric field accurate measurement under wide band, high field intensity and complex environment,and also being capable of being mounted and maintained in the case of being electrified.
Owner:TSINGHUA UNIV

Grinding dynamometer for ultra-precise silicon chip

The invention relates to a grinding dynamometer for an ultra-precise silicon chip. The grinding dynamometer for the ultra-precise silicon chip comprises an inner shaft, a grinding wheel, a three-dimensional force measurement platform and a sensing system signal processor. The measured silicon chip is fixed to the three-dimensional force measurement platform. The grinding wheel is fixed to the inner shaft to be used for grinding the measured silicon chip. The three-dimensional force measurement platform transmits grinding force in the machining process to the sensing system signal processor. The three-dimensional force measurement platform comprises an X-direction differential capacitor unit combination and a Y-direction differential capacitor unit combination. The X-direction differential capacitor unit combination and the Y-direction differential capacitor unit combination each comprise two or more capacitor unit modules which mutually form differentials. Each capacitor unit module is of a comb-shaped structure composed of two or more strip-shaped capacitor units. The dynamic characteristics of a grinding machine and the grinding performance of the grinding wheel are monitored, and the technological parameters such as the feeding speed of the grinding wheel are adjusted in real time according to the grinding force.
Owner:ANHUI KECHUANG PRODUCTIVITY PROMOTION CENT CO LTD
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