sram storage unit, storage array and memory
A storage unit and storage array technology, which is applied in the field of SRAM storage unit, storage array and memory, can solve the problems of SRAM storage unit write operation failure, achieve good writing efficiency, improve writing efficiency, and simple circuit structure
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[0061] In order to make the purpose, features and effects of the present invention more obvious and understandable, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0062] Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways than described here, so the present invention is not limited by the specific embodiments disclosed below.
[0063] Such as Figure 4 The shown SRAM storage unit includes: a first PMOS transistor ML0, a second PMOS transistor ML1, a first NMOS transistor MPD0, a second NMOS transistor MPD1, a first pass transistor MPG0, a second pass transistor MPG1, a first double-gate The PMOS transistor MDP0 , the second dual-gate PMOS transistor MDP1 , the first dual-gate NMOS transistor MDN0 and the second dual-gate NMOS transistor MDN1 , th...
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