Trench type power device manufacturing method and trench type power device
A technology of power devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of cell size reduction and difficulty in realizing trench-type power devices, and achieve the increase and decrease of current paths Photolithography steps, the effect of reducing production costs
Active Publication Date: 2018-05-22
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
However, the reduction of the cell size is limited by the precision of the photolithography process. It is becoming more and more difficult to manufacture trench power devices with high density cells using traditional processes.
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[0024] In order to understand the above objects, features and advantages of the present invention more clearly, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments may be combined with each other in the case of no conflict.
[0025] Many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can also be implemented in other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed below. limit.
[0026] figure 1 A schematic flow chart of a method for fabricating a trench type power device according to an embodiment of the present invention is shown.
[0027] like figure 1 As shown, the method for fabricating a trench type powe...
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The invention provides a trench type power device manufacturing method and a trench type power device, wherein, the trench type power device manufacturing method includes: after implanting P-type ions on the substrate surface to form a P-type region, depositing A silicon oxide layer is used to form a contact hole in the P-type region by photolithography and etching; a first silicon nitride layer is deposited on the surface of the substrate where the contact hole is formed; the first silicon nitride layer is etched to form a contact hole on the side of the contact hole forming sidewalls on the wall; implanting N-type dopant elements into the P-type region to form an N-type region at the bottom of the contact hole; depositing a second silicon nitride layer on the surface of the substrate where the N-type region is formed; etching the second nitrogen SiO layer, forming a trench at the bottom of the contact hole. Through the technical scheme of the present invention, the width of the trench is reduced, the limitation of the precision of the photolithography process on the width of the trench is eliminated, the manufacturing cost of the power device is reduced, and the on-resistance of the power device is reduced at the same time, and the performance of the power device is improved. performance.
Description
technical field [0001] The present invention relates to the field of semiconductor device and process manufacturing thereof, in particular, to a method for manufacturing a trench type power device and a trench type power device. Background technique [0002] The drain and source of the trench-type vertical double-diffusion field effect transistor are respectively on both sides of the power device, and the current flows vertically inside the device, which increases the current density, improves the rated current, and has a smaller on-resistance per unit area. It is a very versatile power device. [0003] At present, the development trend of trench-type vertical double-diffusion field effect transistors is: reducing switching speed and switching loss, reducing chip area, reducing on-resistance, and improving power device withstand voltage. Among them, reducing the total on-resistance of the power device can reduce the static power loss, and the total on-resistance of the powe...
Claims
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IPC IPC(8): H01L21/336H01L29/78H01L29/10H01L29/423
Inventor李理马万里赵圣哲
OwnerFOUNDER MICROELECTRONICS INT