Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, and method of manufacturing silicon carbide semiconductor device

Abstract

A silicon carbide semiconductor substrate (10), comprising: a base substrate (1) having a main surface having an outer diameter of not less than 100 mm and made of single crystal silicon carbide; an epitaxial layer ( 2); and a deformation suppressing layer (8) formed on the backside surface (1B) of the base substrate (1) opposite to the main surface (1A). In this way, deformation of the substrate (eg warping during high temperature processing) is minimized by the deformation inhibiting layer (8). This can reduce the risk of defects such as cracks occurring in the silicon carbide semiconductor substrate (10) during a manufacturing process in which the method of manufacturing a silicon carbide semiconductor device is performed using the silicon carbide semiconductor substrate (10).

Description

technical field [0001] The present invention relates to a silicon carbide semiconductor substrate, a method of manufacturing a silicon carbide semiconductor substrate, and a method of manufacturing a silicon carbide semiconductor device, and in particular, to a silicon carbide semiconductor having high flatness even when heat-treated at a high temperature A substrate, a method of manufacturing a silicon carbide semiconductor substrate, and a method of manufacturing a silicon carbide semiconductor device. Background technique [0002] In recent years, silicon carbide (SiC) crystals have been adopted as semiconductor substrates for manufacturing semiconductor devices. SiC has a larger bandgap than silicon (Si), which has been more widely adopted. Therefore, a semiconductor device using SiC advantageously has characteristics of high breakdown voltage, low on-resistance, and less likely to degrade in a high-temperature environment. [0003] Also, in order to efficiently manufa...

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