Voice-control extruded power generation thin film and preparation method thereof
A thin-film, extruded technology for generating electricity, used in the fabrication/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, and material selection for piezoelectric or electrostrictive devices In other directions, it can solve the problems of all the power generation difficulties, low electricity generation and discontinuity of piezoelectric materials and sound control materials, and achieve the effect of large-scale production, excellent piezoelectric performance and sound control power generation performance, and simple preparation process.
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Embodiment 1
[0022] see figure 1 According to the process, the metal stainless steel plate substrate substrate is ultrasonically cleaned with ion water for 5 minutes, then blown dry with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0×10 -4 Under the condition of Pa vacuum, the first metal silver electrode is prepared by deposition. The process parameter conditions are: Argon is used as the gas reaction source, the argon flow rate is 50 sccm, the purity of the reactive sputtering silver metal target is 99.99%, the substrate temperature is 150° C., and the deposition time is 10 minutes.
[0023] The first graphene conductive film is prepared by PECVD technology; its process parameter condition is: methane and hydrogen are used as the mixed gas reaction source, according to the volume ratio, the ratio of methane and hydrogen in the mixed gas reaction source is: 3:2, and other Hydrogen alone is used as a reaction source, methane and hydrogen are used as a mixed gas rea...
Embodiment 2
[0030] The metal stainless steel plate substrate substrate was first cleaned with ion water for 5 minutes, then dried with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0×10 -4 Under the condition of Pa vacuum, the first metal silver electrode is prepared by deposition. The process parameter conditions are: Argon is used as the gas reaction source, the argon flow rate is 40 sccm, the purity of the reactive sputtering silver metal target is 99.99%, the substrate temperature is 100° C., and the deposition time is 7 minutes.
[0031] The first graphene conductive film is prepared by PECVD technology; its process parameter conditions are: methane and hydrogen are used as the mixed gas reaction source, according to the volume ratio, the ratio of methane and hydrogen in the mixed gas reaction source is: 4:1, and other Hydrogen alone is used as a reaction source, methane and hydrogen are used as a mixed gas reaction source with a flow rate of 70 sccm, and hydro...
Embodiment 3
[0038] The metal stainless steel plate substrate substrate was first cleaned with ion water for 5 minutes, then dried with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0×10 -4 Under the condition of Pa vacuum, metal silver electrodes were prepared by deposition. The process parameters and conditions are as follows: argon is used as the gas reaction source, the argon flow rate is 35 sccm, the purity of the reactive sputtering silver metal target is 99.99%, the substrate temperature is 130°C, and the deposition time is 6 minutes.
[0039] The first graphene conductive film is prepared by PECVD technology; its process parameter conditions are: methane and hydrogen are used as the mixed gas reaction source, according to the volume ratio, the ratio of methane and hydrogen in the mixed gas reaction source is: 1:1, and other Hydrogen alone is used as a reaction source, methane and hydrogen are used as a mixed gas reaction source with a flow rate of 60 sccm, an...
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Abstract
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