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Method for sintering high-density ITO (Indium Tin Oxide) rotating target

A sintering method and technology of rotating target, which is applied in the sintering field of high-purity and high-density ITO rotating target, can solve the problems of inconsistent shrinkage and poor uniformity of the target material, so as to ensure uniform shrinkage, reduce the influence of shrinkage resistance, and provide uniformity. and the effect of relative density

Active Publication Date: 2017-12-08
725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defects of inconsistent shrinkage of various parts and poor target material uniformity during the sintering process of the rotating target, and to provide a sintering method of a high-density ITO rotating target

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for sintering a high-density ITO rotary target, the steps are as follows:

[0025] Using the method of cold isostatic pressing, the ITO rotating target blank and the ITO planar target blank were respectively prepared, and the components of both were In 2 o 3 :SnO 2 =90:10. The relative density of the rotating target blank is 66%, the inner diameter is 170mm, and the outer diameter is 212mm. The ITO planar target blank is circular, the diameter is 220mm, the thickness is 10mm, and the relative density is 66%.

[0026] First put the ITO planar target blank on the setter, then put the ITO rotating target blank on the ITO planar target blank, and ensure that the bottom surface of the rotating target blank is completely placed on the planar target blank. Put the placed green body and setter into an oxygen atmosphere sintering furnace, feed oxygen with a purity of more than 99.99%, and keep the pressure at 0.5MPa. Raise the temperature at 2-6°C / min to 600°C and k...

Embodiment 2

[0030] A method for sintering a high-density ITO rotary target, the steps are as follows:

[0031] Using the method of slip casting, ITO rotating target blank and ITO planar target blank were respectively prepared, and the components of both were In 2 o 3 :SnO 2 =95:5. The relative density of the rotating target blank is 63%, the inner diameter is 138mm, and the outer diameter is 182mm. The ITO planar target blank is ring-shaped, with an inner diameter of 130mm, an outer diameter of 190mm, a thickness of 12mm, and a relative density of 64%.

[0032] Stack 2 pieces of ITO planar target blanks on the setter to ensure that the 2 pieces of blanks are completely overlapped. Then put the ITO rotating target blank on the ITO plane target blank, and ensure that the bottom surface of the rotating target blank is completely placed on the plane target blank. Put the placed green body and setter into the oxygen atmosphere sintering furnace, feed oxygen with a purity of more than 99.99...

Embodiment 3

[0036] A method for sintering a high-density ITO rotary target, the steps are as follows:

[0037] The ITO rotary target green body and the indium oxide green body were respectively prepared by the method of slip casting, and the components of the ITO rotary target were all In 2 o 3 :SnO 2=97:3. The relative density of the rotating target green body is 63%, the inner diameter is 138mm, the outer diameter is 182mm, the indium oxide green body is square, the side length is 200mm, the thickness is 8mm, and the relative density is 61%.

[0038] Stack two indium oxide green bodies on the setter to ensure that the two green bodies are completely overlapped. Then put the ITO rotating target blank on the indium oxide blank, and ensure that the bottom surface of the rotating target blank is completely placed on the plane target blank. Put the placed green body and setter into the oxygen atmosphere sintering furnace, feed oxygen with a purity of more than 99.99%, and keep the pressu...

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Abstract

The invention discloses a method for sintering a high-density ITO (Indium Tin Oxide) rotating target. The method comprises the following steps: preparing raw materials into an ITO rotating target biscuit, and sintering the ITO rotating target biscuit in an oxygen atmosphere sintering furnace, thereby obtaining the ITO rotating target. Before firing, a ceramic biscuit is arranged on a bearing plate, the ITO rotating target biscuit is arranged on the ceramic biscuit, and the bottom surface of the ITO rotating target biscuit is completely contacted with the ceramic biscuit, so that the ITO rotating target biscuit and the ceramic biscuit are synchronously shrunk in the firing process; and therefore, the relative displacement between the two is eliminated or reduced, the influence of shrinkage resistance is eliminated or reduced, the phenomenon that the shrinkage on the top and at the bottom of the rotating target is inconsistent is improved, and the uniformity and relative density of the target are provided. The difference of the relative density at each part of the rotating target is not more than 0.1%, and the difference of the inner diameter of each part is not more than 0.2%.

Description

technical field [0001] The invention relates to a preparation process of a ceramic rotating target, in particular to a sintering method of a high-purity and high-density ITO rotating target. Background technique [0002] ITO film is a good transparent electrode material, which is widely used in flat panel display and other fields. With the rise and rapid development of the display industry, the application of ITO targets is becoming more and more extensive. The currently used ITO targets mainly include planar targets and rotating targets. Compared with planar targets, the advantages of rotating targets are: 1) high efficiency (over 70%); 2) large input power per unit area, which can be obtained Higher film forming speed; 3) Good stability in the coating process. [0003] However, the preparation of the ITO rotating target is difficult, especially the control of the shrinkage uniformity of the target during the sintering process. The rotating target is a thin-walled hollow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622
CPCC04B35/453C04B35/622C04B2235/3286C04B2235/3293
Inventor 师琳璞方宏刘冠鹏杨硕
Owner 725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
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