Semiconductor device, manufacturing method thereof and electronic device comprising device

A semiconductor and device technology, applied in the field of electronic equipment, can solve the problem that horizontal devices are not easy to shrink

Active Publication Date: 2018-04-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to this arrangement, horizontal type devices are not easy to further shrink

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device comprising device
  • Semiconductor device, manufacturing method thereof and electronic device comprising device
  • Semiconductor device, manufacturing method thereof and electronic device comprising device

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Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention relates to a semiconductor device, a manufacturing method thereof and an electronic device comprising the device. According to an embodiment, the semiconductor device may include a substrate, a first source / drain layer, a channel layer, a second source / drain layer and a gate stack, wherein the first source / drain layer, the channel layer and the second source / drain layer are sequentially stacked on the substrate, the channel layer contains a semiconductor material which can increase on-state current and / or decrease off-state current compared with Si material, and the gate stack isformed around the periphery of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical semiconductor device with enhanced on-state current and / or reduced off-state current, a manufacturing method thereof, and an electronic device including the semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. Contents of the invention [0003] In view of this, an object of the present disclosure is at least in part to provide a vertical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/10H01L21/336
CPCH01L21/8234H01L21/823412H01L21/823437H01L21/823487H01L27/088H01L29/775B82Y10/00H01L29/41741H01L29/66439H01L29/66469H01L29/0676H01L29/267H01L29/66742H01L29/78642H01L29/0649H01L29/42392H01L29/66666H01L29/7827H01L29/0847H01L29/66522H01L29/42376H01L29/7848H01L21/823418H01L21/82345H01L21/823475H01L21/823842H01L21/823871H01L29/0638H01L29/1083H01L29/0653H01L29/66712H01L29/7813H04N13/332H04N13/111H04N13/366H04N13/398G05B23/0216G05B2219/32014G06F3/04817G06F3/0482G06T19/006H04N7/181G06V20/40G06V20/44G06V2201/06H04N23/698H04N23/90H01L21/02532H01L21/3065H01L29/04H01L29/165H01L21/02636H01L21/2252H01L21/2258H01L21/31053H01L21/324H01L29/1037H01L29/1054H01L29/1095H01L29/152H01L29/205H01L29/45H01L29/66431H01L29/66462H01L29/6656H01L29/7788H01L21/3083H01L21/8221H01L21/823807H01L21/823814H01L21/823864H01L21/823885H01L27/092
Inventor 朱慧珑王桂磊亨利·H·阿达姆松张严波朱正勇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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