Method and controller for manufacturing substrate of power device
A technology for power devices and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high manufacturing cost, long production time, low production efficiency, etc., to save production time and production cost, reduce production cost, The effect of saving formation time
Inactive Publication Date: 2018-05-18
深圳市麦思浦半导体有限公司
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Problems solved by technology
According to the conventional processing method in the prior art, the redistribution time of phosphorus or boron usually takes about 7 days, and the excessively long processing time also leads to low production efficiency and high manufacturing cost
[0005] It can be seen that the substrate of power devices is manufactured by epitaxy or deep junction diffusion process. The substrate material manufactured by epitaxy method is very expensive, and the substrate material manufactured by deep junction diffusion requires long-term boron or phosphorus diffusion, and the production time is very long. also high
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[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0043] method embodiment
[0044] This embodiment provides a method for manufacturing a substrate of a power device, see figure 1 , including step S101, step S102, and step S103.
[0045] In step 201, the original single wafer N- is obtained.
[0046] see figure 2 In (a), the original single wafer N- is obtained, that is, an original single wafer N- is selected.
[0047] For how to select the original single wafer N-, the embodiment of the present invention does not describe in detail, and reference can be made to the prior art implementation of selecting the original single wafer N-, as well ...
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The invention is applicable to the field of power devices, and provides a method and a controller for manufacturing a substrate of a power device. The method comprises the steps of acquiring an original single crystal slice N-; etching at least one groove on the original single crystal slice N-, forming an N+ layer on the back, where the groove is etched, manufacturing a substrate of the power device with an N- layer on the front surface and N- on the back surface. When a substrate of a power device is manufactured, a groove is etched on the original single crystal slice N-, forming an N+ layer on the back, where the groove is etched, so as to manufacture the substrate of the power device. In the prior art, an N+ layer is formed on the back of the original single crystal wafer N-, and thena groove is then etched on the N+ layer, the method disclosed in the invention can save time for forming N+ layer on the back, the production cost is reduced, and finally the production time and theproduction cost of the substrate are saved.
Description
technical field [0001] The invention belongs to the field of power devices, in particular to a method for manufacturing a substrate of a power device and a controller. Background technique [0002] Power semiconductor technology is the core of power electronics technology. With the development of microelectronics technology, modern power semiconductor technology represented by gate-controlled power devices and intelligent power integrated circuits has developed rapidly since the 1980s, which has greatly promoted Advances in power electronics. The continuous progress of power electronics technology in turn promotes the development of power semiconductor technology in the direction of high frequency, high temperature, high voltage, high power, intelligence and systematization. After more than 40 years of development, power semiconductor devices have continuously improved in device manufacturing technology, and have experienced discrete devices represented by thyristors, which...
Claims
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Login to View More IPC IPC(8): H01L29/06
CPCH01L29/0657H01L29/0684
Inventor王新
Owner深圳市麦思浦半导体有限公司