Crystalline silicon photovoltaic solar cell electric injection annealing test device and method

Abstract

A t device and method for electric injection annealing of crystalline silicon photovoltaic solar cell the test device comprises a dark box, sample test bench, Temperature control device, A power supply device and an image acquisition device, the aforementioned sample test bench, Temperature control device, A power supply device and an image acquisition device are arranged in the dark box, The sample test bench is used for placing solar cell sheets, the temperature control device is used for controlling the temperature of the solar cell sheets, the power supply device is used for supplying current to the solar cell sheets, and the image acquisition device is used for collecting electroluminescence images of the solar cell sheets under different temperature and current conditions. The devicecan provide stable temperature and current, and obtain electroluminescence images of solar cells under different temperature and current conditions. The device can conveniently view the whole processof excitation defects and passivation defects of solar cells, and has simple structure and convenient testing.

Description

technical field [0001] The invention relates to the field of manufacturing solar cells, in particular to an electric injection annealing test device and method for crystalline silicon photovoltaic solar cells. Background technique [0002] As a clean and renewable energy source, solar energy has always been paid attention to by people. Crystalline silicon solar cells are currently the main products in the photovoltaic market, but the problem of light-induced degradation (LID) greatly limits their large-scale mass production applications. The initial light-induced attenuation of photovoltaic modules on the market is caused by the initial light-induced attenuation of the battery, so the anti-light attenuation treatment of the battery is required. Passivating the corresponding defects and impurities is an effective way to suppress light-induced attenuation. The main mechanism is: light or electric injection changes the carrier concentration to induce the formation of recombina...

AI Technical Summary

Problems solved by technology

Once the corresponding temperature is exceeded or an external voltage is applied, the recombination centers that have lost their activity will be activated, and it is difficult to passivate all recombination centers effectively by a single injection method

For multiple decay mechanisms, polycrystalline processing will have multiple sub-stages and require longer processing times

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