3D memory device and manufacturing method thereof

A memory device and manufacturing method technology, applied in the field of memory, can solve the problem that passivation elements cannot diffuse into the channel layer, and achieve the effect of improving yield and reliability

CN109671715BActive Publication Date: 2021-04-23YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2021-04-23

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Abstract

The application discloses a 3D storage device and a manufacturing method thereof. The 3D memory device includes: a substrate; a gate stack structure located above the substrate, the gate stack structure including a plurality of gate conductors and a plurality of interlayer insulating layers stacked alternately; penetrating through the gate stack A plurality of channel pillars of a structure, the plurality of channel pillars comprising: a core including a fill layer containing a passivation element; a channel layer surrounding the core, the channel layer containing the passivation elements. In the 3D memory device, since the filling layer is located inside the channel pillar, the passivation element can diffuse in the channel layer of the corresponding channel pillar. Compared with the technical solution of setting the passivation element source outside the channel, it avoids the problem that the passivation element cannot be effectively diffused to the channel layer due to the back-end line and the stacked structure blocking the diffusion of the passivation element, thereby improving Yield and reliability of 3D memory devices.
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Description

technical field

[0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and manufacturing methods thereof. Background technique

[0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost.

[0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared w...

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Embodiment Construction

[0033] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0034] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0035] If it is to describe the situation directly on another layer or an...