Deposition method of silicon nitride film, silicon nitride film and perc battery

A technology of silicon nitride film and deposition method, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of decreased battery efficiency, high process window requirements, and limited equipment production capacity, etc., to improve compactness and short-circuit current. , Guaranteed effect of open circuit voltage and fill factor

Active Publication Date: 2021-02-26
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This limits the capacity of the equipment and requires a higher process window
When the microwave distribution and gas atmosphere in the equipment change, the silicon nitride film thickness of some silicon wafers may be lower than 90 nanometers, and the cell efficiency of this part of the silicon wafers will be greatly reduced.

Method used

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  • Deposition method of silicon nitride film, silicon nitride film and perc battery
  • Deposition method of silicon nitride film, silicon nitride film and perc battery
  • Deposition method of silicon nitride film, silicon nitride film and perc battery

Examples

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Effect test

Embodiment 1

[0037] A method for depositing a silicon nitride thin film of the present invention, the silicon nitride thin film is a back silicon nitride thin film for a PERC cell, and the deposition method may further comprise the steps:

[0038]First deposit a layer of aluminum oxide film about 23 nanometers on the back of the silicon substrate, and then deposit the silicon nitride film. The silicon substrate with the aluminum oxide film deposited on the back is placed in a reaction device (specifically, a flat-plate PECVD equipment), the control pressure is 0.25mbar, the temperature is 350°C, and the sample transmission speed is 210cm / min. The first microwave source, The second microwave source, the third microwave source, the fourth microwave source, the fifth microwave source and the sixth microwave source carry out the deposition of silicon nitride film, and each microwave source is equipped with a left microwave generator and a right microwave generator, and each microwave The proce...

Embodiment 2

[0049] A method for depositing a silicon nitride thin film of the present invention, the silicon nitride thin film is a back silicon nitride thin film for a PERC cell, and the deposition method may further comprise the steps:

[0050] First deposit a layer of aluminum oxide film about 20 nanometers on the back of the silicon substrate, and then deposit the silicon nitride film. Place the silicon substrate with the aluminum oxide film deposited on the back in the reaction device, control the pressure at 0.25mbar, the temperature at 400°C, and the transmission speed at 240cm / min, using the first microwave source, the second microwave source, and the third microwave source successively , the fourth microwave source, the fifth microwave source and the sixth microwave source carry out the deposition of the silicon nitride film, each microwave source is provided with a left microwave generator and a right microwave generator, and the process parameters of each microwave source are se...

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Abstract

The invention discloses a deposition method of a silicon nitride film, a silicon nitride film and a PERC battery. The deposition method includes placing the silicon substrate with the aluminum oxide film deposited on the back in a reaction device, and successively adopting the first microwave source, the second microwave source, the third microwave source, the fourth microwave source, the fifth microwave source and the sixth microwave The silicon nitride film is deposited from the source, and after the deposition process, the silicon nitride film is prepared on the aluminum oxide film. The silicon nitride thin film has both high total reflection function and high density. The silicon nitride thin film prepared by the invention is mainly used as the back silicon nitride thin film of the PERC cell. The method of the invention makes it possible to reduce the thickness of the silicon nitride film to 75 nanometers or even below without reducing the conversion efficiency of the PERC cell, thereby increasing the production capacity of the equipment and expanding the process window.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a method for depositing a silicon nitride film, a silicon nitride film and a PERC battery, in particular to a method for depositing a silicon nitride film on the back side of a PERC battery with high density, and the method for depositing The silicon nitride thin film obtained by the method and the PERC cell containing the silicon nitride thin film. Background technique [0002] PERC battery (Passivated-Emitter and Rear Cell, passivated emitter rear contact battery) is highly compatible with the current industrial battery production line due to its preparation process, only adding rear aluminum oxide / silicon nitride deposition equipment and silicon nitride deposition equipment to the original battery production line Laser ablation equipment has greatly reduced the cost of technology introduction to production enterprises, and at the same time the conversion efficiency has been greatly im...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C16/34C23C16/455C23C16/511H01L31/18H01L31/0216H01L31/068
CPCY02E10/547Y02P70/50
Inventor许烁烁舒勇东刘良玉
Owner48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP