A high-sensitivity vertical magnetic field sensor with symmetrical structure
A magnetic field sensor, high-sensitivity technology, applied in the size/direction of the magnetic field, Hall-effect devices, manufacturing/processing of electromagnetic devices, etc., can solve the problems of magnetic field distortion, low magnetic field sensitivity, high misalignment, etc.
Active Publication Date: 2021-09-10
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology
However, this method requires additional processing of the magnetic field concentrator, which increases the production cost and is prone to the disadvantage of magnetic field distortion
At present, new anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), giant magnetoresistance (GMI) and other magnetic field elements show high magnetic field sensitivity and good temperature stability, but they cannot be compared with silicon-based processes. Very good compatibility, but still unable to meet the development requirements of low-cost and high-integration magnetic field sensor microsystems
[0004] At present, low-cost two-dimensional and three-dimensional integrated Hall magnetic sensors based on deep submicron standard silicon-based CMOS technology have serious problems of low magnetic field sensitivity and high offset, especially the extremely low magnetic field sensitivity and non-magnetic field sensitivity of traditional vertical Hall devices. The fully symmetrical device structure has become the biggest bottleneck restricting the development and application of low-cost 2D and 3D integrated Hall sensors
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[0023] Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent replacements or equivalent transformations all fall within the protection scope of the present invention.
[0024] The present invention discloses a high-sensitivity vertical magnetic field sensor with a symmetrical structure, including a first vertical magnetic field sensor and a second vertical magnetic field sensor arranged vertically symmetrically, such as figure 1 and figure 2 As shown, the first vertical magnetic field sensor and the second vertical magnetic field sensor share the third N+ region 6 .
[0025] The magnetic field sensor includes a silicon substrate 1, an insulator layer 2, a first P-region 3, a second P-region 30, a third P-regio...
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Abstract
The invention discloses a high-sensitivity vertical magnetic field sensor with a symmetrical structure, the magnetic field sensor includes a first vertical magnetic field sensor and a second vertical magnetic field sensor arranged vertically symmetrically, the first vertical magnetic field sensor and the second vertical magnetic field sensor The magnetic field sensors share the third N+ region. The magnetic field sensor includes a silicon substrate, an insulator layer, a first P-region, a second P-region, a third P-region, a fourth P-region, a first N+ region, a second N+ region, a third N+ region, The fourth N+ region, the fifth N+ region, the gate dielectric layer and the gate. The production process of the vertical magnetic field sensor with symmetrical structure is simple, the structure is completely symmetrical, the initial offset of the device is low, and the offset of the device can be eliminated by using the spinning current technology, and the residual offset is low. The vertical magnetic field sensor has high magnetic field sensitivity, and can form a two-dimensional magnetic field sensor, so as to realize the detection of a two-dimensional magnetic field parallel to the device plane.
Description
technical field [0001] The invention relates to a high-sensitivity vertical magnetic field sensor with a symmetrical structure, which can be used in the technical field of electromagnetic detection. Background technique [0002] The vertical magnetic field sensor can detect the magnetic field parallel to the surface of the device to form a two-dimensional (2D) and three-dimensional (3D) magnetic field sensor to realize functions such as precise position positioning, small displacement measurement, rotational movement, current detection and angle measurement. In recent years, vertical Hall magnetic field sensors with low-cost silicon-based technology have been widely used in many fields such as automatic control, automobiles, medical equipment, intelligent instruments and meters, and consumer electronics. Traditional silicon-based CMOS vertical Hall devices such as five-hole and six-hole structures, although the device structure is simple, the initial misalignment of the devi...
Claims
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IPC IPC(8): H01L43/06H01L43/14G01R33/02H10N52/00H10N52/01
CPCG01R33/02H10N52/00H10N52/01
Inventor徐跃宋福明袁丰
OwnerNANJING UNIV OF POSTS & TELECOMM