Colloidal quantum dot infrared focal plane array and preparation method based on interference enhanced structure

A technology of colloidal quantum dots and infrared focal plane, applied in the field of photoelectric sensors, can solve the problems of limited application, inability to apply high-speed imaging scenes, slow response speed, etc., and achieve the effects of high sensitivity, improved built-in potential, and low cost

Active Publication Date: 2021-10-08
唐鑫
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Problems solved by technology

However, thermal radiation measurement mainly relies on the detection of heat-sensitive elements that change resistance when heated, and its response speed is slow (20 milliseconds to 200 milliseconds), which cannot be applied to high-speed imaging scenarios, which greatly limits the application

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  • Colloidal quantum dot infrared focal plane array and preparation method based on interference enhanced structure
  • Colloidal quantum dot infrared focal plane array and preparation method based on interference enhanced structure
  • Colloidal quantum dot infrared focal plane array and preparation method based on interference enhanced structure

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Embodiment Construction

[0041] The technical solutions of the present invention will be further elaborated below in conjunction with the embodiments and the accompanying drawings.

[0042] The colloidal quantum dot infrared focal plane array based on the interference enhancement structure of the present invention combines the thimeros colloidal quantum dots with liquid phase synthesis, volume controllability, and adjustable absorption band with an interference enhancement structure to realize the detection of specific wavelength infrared rays. The photoresponse is amplified, thereby improving the resolution and sensitivity of infrared thermal imaging. Infrared thermal imaging mainly relies on the detection of mid-band (3-5 microns) and long-band (8-10 microns) infrared rays. By designing the interference enhancement structure, the light intensity of certain wavelength bands in the photosensitive layer can be selectively increased. Using colloidal quantum dots as the photosensitive layer, based on th...

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Abstract

The invention discloses a colloidal quantum dot infrared focal plane array based on an interference enhancement structure, comprising: a quantum dot pixel layer and an interference enhancement structure; the quantum dot pixel layer includes: a common electrode layer, an infrared quantum dot thin film layer, and a transflective electrode layer; the interference enhancement structure includes: an optical isolation layer and a reflective electrode layer. The present invention uses new colloidal quantum dots as the photosensitive material, which has the advantages of high sensitivity and low cost; by adding an interference enhancement structure to gather infrared rays of a specific wavelength, the light response is improved; fast light response is realized, and the response time is less than 20 nanoseconds; colloidal quantum dots can Large-scale liquid phase synthesis greatly reduces costs.

Description

technical field [0001] The invention relates to the technical field of photoelectric sensors, in particular to a colloidal quantum dot infrared focal plane array based on an interference enhancement structure and a preparation method thereof. Background technique [0002] Infrared thermal imaging technology has an extremely wide range of applications. At present, infrared thermal imagers mainly rely on narrow-band semiconductor materials and bolometers. Narrowband semiconductor materials (such as mercury cadmium tellurium alloy (HgCdTe), indium antimonide (InSb), etc.) have extremely high sensitivity and reaction speed at liquid nitrogen temperature. However, the synthesis of narrow-band semiconductor materials relies on complex, high-cost, and low-yield physical or chemical deposition methods, such as molecular beam epitaxy and vapor phase synthesis. Excessive cost (greater than 30000RMB) limits its application to military and scientific research purposes. However, infra...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0232H01L31/09H01L31/18
CPCH01L31/02327H01L31/035218H01L31/09H01L31/18Y02P70/50
Inventor 唐鑫刘明政
Owner 唐鑫
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