Semiconductor deposition process compensation method, compensation device and semiconductor deposition equipment

Abstract

The invention discloses a semiconductor deposition process compensation method, a compensation device, and semiconductor deposition equipment, wherein the deposition process compensation method includes: Step 1: Before executing the current process step, it is judged whether parameter compensation needs to be performed on the process parameter value of the current process step, If yes, obtain the current target consumption value, and calculate the compensated process parameter value according to the preset multiple target consumption values ​​and the parameter compensation value corresponding to each target consumption value; Step 2: According to the The process parameter value is used to execute the current process step; wherein, the parameter compensation value includes at least one of the following: deposition time compensation value, target-base distance compensation value, and sputtering power compensation value. The beneficial effect of the present invention is that the user can freely choose to turn on time compensation, sputtering power compensation or target-based distance compensation independently, and can also turn on any two of them at the same time, or turn on the three ways together, and in the steps of each process formula Flexible configuration.

Description

technical field [0001] The present invention relates to the technical field of semiconductor processes, and in particular, to a compensation method, compensation device and semiconductor deposition equipment for a semiconductor deposition process. Background technique [0002] With the rapid development of the semiconductor manufacturing industry, more and more semiconductor devices are produced and used, such as: magnetron PVD (Physical Vapor Deposition, Physical Vapor Deposition) devices, etc. These semiconductor devices are required to coat substrates Apply the target of the corresponding material. like figure 1 Shown is a typical magnetron PVD equipment structure diagram, including equipment cavity 1, target material 2 used in sputtering deposition, magnetron 5, sputtering power supply output power to target material 2, substrate holder 3 for The substrate 4 is contained, and the substrate holder 3 can be driven by a motor or driven by a cylinder to move up and down, s...

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