Method for eliminating electric leakage of capacitor in semiconductor process, capacitor and semiconductor device

Abstract

The invention discloses a method for eliminating electric leakage of a capacitor in a semiconductor process, the capacitor and a semiconductor device, and belongs to the technical field of semiconductor manufacturing, and the method comprises the following steps: when the capacitor of the semiconductor device is manufactured, manufacturing a first electrode of the capacitor into an electrode structure containing an H atom barrier layer, and during specific implementation, manufacturing a second electrode of the capacitor into an H atom barrier layer; the electrode structure containing the H atom barrier layer can be a multi-metal layer structure containing a tungsten layer. The leakage problem of the capacitor in the semiconductor process is solved, the integration level of device manufacturing can be improved, the design margin can be improved conveniently, the integration level of the semiconductor device using the capacitor is improved, and the capacitance value stability and the memory refreshing performance can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more particularly, to a method for eliminating capacitor leakage in a semiconductor process, a capacitor and a semiconductor device. Background technique [0002] With the increasing integration of semiconductor memory devices, the size of capacitors constituting the memory devices is continuously reduced. The process of making capacitors with reduced size also becomes more difficult. Capacitors with reduced size can also cause problems such as memory refresh due to the smaller capacitance value. [0003] Capacitors While it is important to ensure the value of the capacitance, it is also very important that the insulator leakage of the capacitor does not occur. Use current ZrO x , Al 2 O x , HfO x For capacitors such as insulators containing "O" atoms, if "H" hydrogen atoms are introduced into the subsequent process, oxygen vacancies will occur, and the oxygen vacanc...

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a method for eliminating capacitor leakage in semiconductor technology, capacitors and semiconductor devices, solve the leakage problem of capacitors in semiconductor technology, can improve the integration of device production and facilitate the improvement of design The margin, the integration of semiconductor devices using capacitors becomes higher, and the stability of capacitance values ​​and memory refresh performance can be ensured

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