Exposure apparatus and electronic device manufacturing method

Abstract

An exposure apparatus including a field stop is provided. The exposure apparatus includes an illumination optical system that guides light from a light source to a pattern forming section, a projection optical system that projects, onto an exposed surface, a pattern image formed by the pattern forming section with light from the illumination optical system, a driving section that moves, in a scanning direction, a substrate arranged on the exposed surface, and a block section that is disposed between the projection optical system and the exposed surface, where the block section has a scanning window that determines a width, in the scanning direction, of an exposure region exposed to light projected by the projection optical system.

Description

BACKGROUND[0001]1. Technical Field[0002]The present invention relates to an exposure apparatus and an electronic device manufacturing method. More particularly, the present invention relates to an exposure apparatus including a field stop and to an electronic device manufacturing method performed by using the exposure apparatus. The present application is related to and claims priority from the following U.S. Provisional Patent Application, the contents of which are incorporated herein by reference.[0003]U.S. Provisional Patent Application No. 61 / 071,046 filed on Apr. 9, 2008[0004]2. Description of the Related Art[0005]An exposure apparatus used for lithography irradiates, via an illumination optical system, a reticle with light generated by a light source, which is referred to as illumination light. The illumination light is transmitted through or reflected by the reticle. A substrate such as a silicon wafer is then irradiated, via a projection optical system, with the light transm...

AI Technical Summary

Benefits of technology

[0012]In light of the above, it is an object of an aspect of the innovations herein to improve the product yield and throughput. The above and other objects can be

Problems solved by technology

For such a very short wavelength range of EUV light, no existing materials have a sufficient transmittance to be used as refractive optical members.

Because of the image-formation catoptric optical system between the mask and the field stop as described above, however, the conventional EUVL exposure apparatus suffers from a relatively large number of reflections in the optical path of the illumination optical system.

As a result, the conventional EUVL exposure apparatus experiences a large loss of light and thus cannot achieve the desired throughput.

As a result, the product yield becomes significantly low.

If the pellicle is provided in the proximity of the surface of the reticle, however, it becomes difficult to position a field stop in the vicinity of the reticle.

Images