Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program
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first embodiment
[0034]A first embodiment of the present disclosure is described below.
[Substrate Processing Apparatus 1]
[0035]FIG. 1 is a view illustrating an overall configuration of a substrate processing apparatus 1 which is suitably used in a first embodiment of the present disclosure. FIG. 2 is a view illustrating a process chamber 3 which accommodates a boat 14 and wafers (or substrates) 12 illustrated in FIG. 1. FIG. 3 is a view illustrating a peripheral configuration of the process chamber 3 that is illustrated in FIG. 1 and a configuration of a control program 40 that controls the substrate processing apparatus 1.
[0036]A substrate processing apparatus 1 is a so-called reduced-pressure CVD apparatus that processes, for example, a wafer used in manufacturing a semiconductor device. As illustrated in FIG. 1, the substrate processing apparatus 1 includes a cassette delivery unit 100, a cassette stocker 102 that is installed at a side of a rear surface of the cassette delivery unit 100, a buffe...
second embodiment
[0089]Next, a second embodiment of the present disclosure is described below.
[0090]In the first embodiment as described above, during the supply period of the process gas, the temperature of the periphery side of the wafer is maintained to be lower than the temperature of the center side of the wafer by a specific temperature difference so as to make the thickness of the film formed on the wafer uniform. In this case, if it is intended to increase the temperature difference between the periphery side and the center side of the wafer (if it is intended to decrease the temperature of the periphery side of the wafer to be lower than the temperature of the center side of the wafer), it may be considered to improve a cooling performance of the cooling device. However, if the cooling performance of the cooling device is enhanced, the load of the heating device for maintaining the temperature of the center side of the wafer constant is increased. Thus, according to the second embodiment of...
third embodiment
[0106]Next, a third embodiment of the present disclosure is described below.
[0107]FIG. 9 is a timing chart illustrating an example of a heating control and a process gas supply control for the substrate processing apparatus 1 according to a third embodiment of the present disclosure. Since the configuration of the substrate processing apparatus 1 according to the third embodiment is the same as the configuration of the substrate processing apparatus 1 according to the first embodiment, the descriptions for the substrate processing apparatus 1 are omitted.
[0108]In the third embodiment, as shown in FIG. 9, the second control is executed after the temperature of the periphery side of the wafer 12 becomes lower than the temperature of the center side by a specific temperature over the first control while the temperature of the center side of the wafer 12 is maintained at a specific temperature. While the first control is executed (specifically, when the temperature of the periphery side...
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Abstract
Description
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