Integrated gallium nitride power amplifier and switch

Abstract

A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.

Description

BACKGROUNDField[0001]This invention relates generally to active solid-state devices, and more specifically to a gallium nitride radio frequency power amplifier and a gallium nitride multi-band radio frequency switch.Related Art[0002]A gallium nitride (hereinafter “GaN”) high-electron-mobility transistor (hereinafter “HEMT”) is a depletion mode device, which is normally on, that may be used as a switch.[0003]FIG. 1 is a simplified schematic of a known multi-band power amplifier circuit 100 comprising a radio frequency (hereinafter “RF”) power amplifier and a multi-band RF switch 102. The RF power amplifier (hereinafter also referred to as “PA”) comprises at least one field-effect transistor (hereinafter “PA-FET”) 104. The multi-band RF switch 102 includes a plurality of FETs. The known multi-band power amplifier circuit 100 also comprises a controller 106 that controls operation of the multi-band RF switch 102.[0004]The multi-band power amplifier circuit 100 includes a transformer 10...

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