Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory

a technology of non-volatile memory and integrated circuit, which is applied in the direction of digital storage, instruments, semiconductor devices, etc., can solve the problems of not being able to achieve the optimal behavior of a memory device, and incorporating otp and mtp memories nonetheless

Inactive Publication Date: 2010-08-31
INVENSAS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution enables efficient programming and reprogramming of memory devices with precise control over charge injection and threshold voltage, facilitating multi-level architectures and reducing additional processing steps, thus addressing the limitations of prior art.

Problems solved by technology

Incorporating OTP and MTP memories nonetheless typically comes at the expense of some additional processing steps.
However, it is unclear whether the device actually works in the way the inventors claim.
That is, it is not apparent that the channel current will be initiated to induce hot-hole-injection since the state of the floating gate is unknown and there is no available means to couple a voltage unto the floating gate.
This is not a very optimal behavior for a memory device.
The drawbacks of this cell, however, include the fact that the cell and channel 412 must be asymmetric, and the coupling is only controlled using the length dimension of the active regions.
Because of these limitations, it also does not appear to be extendable to a multi-level architecture.
Moreover, it apparently is only implemented as a p-channel device.

Method used

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  • Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
  • Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
  • Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory

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Embodiment Construction

[0032]The present disclosure concerns a new type of non-volatile memory device structure (preferably single poly) that can be operated either as an OTP (one time programmable) or as an MTP (multiple time programmable) memory cell. The preferred device structure is fully compatible with advanced CMOS logic process, and would require, at the worst case, very minimal additional steps to implement.

[0033]A unique aspect of the present device is that the floating gate of the memory cell structure is electrically coupled strongly through one of the S / D junctions of the transistor, whereas traditional single poly nonvolatile memory cells require either an additional interconnect layer to couple to the floating gate, or the floating gate has virtually none or minimal electrical coupling to any of the existing electrical signals. Moreover, unlike the 2008 / 0186772 reference, the coupling ratio can be more specific and precise. That is, by exactly controlling the coupling ratio (through areal m...

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Abstract

A programmable non-volatile device is operated using a floating gate that functions as a FET gate that overlaps a portion of a source / drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

Description

RELATED APPLICATION DATA[0001]The present application claims the benefit under 35 U.S.C. 119(e) of the priority date of Provisional Application Ser. No. 60 / 984,615 filed Nov. 1, 2007 which is hereby incorporated by reference.[0002]The application is also related to the following applications, all of which are filed on this same date and hereby incorporated by reference herein:[0003]INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY Ser. No. 12 / 264,029[0004]METHOD OF MAKING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY Ser. No. 12 / 264,060FIELD OF THE INVENTION[0005]The present invention relates to operating non-volatile memories which can be programmed one time, or multiple times in some instances. The invention has particular applicability to applications where is it desirable to customize electronic circuits.BACKGROUND[0006]One time programmable (OTP) and multi-time pr...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): G11C11/34
CPCG11C16/0408H01L27/11521H01L29/7885H01L29/42324H01L29/66825H01L27/11558G11C2216/10H10B41/30H10B41/60
InventorLIU, DAVID
OwnerINVENSAS CORP